Epitaxial structure of Si-based gallium nitride device

An epitaxial structure, gallium nitride technology, applied in the field of microelectronics, can solve problems such as poor lattice quality

Pending Publication Date: 2020-04-24
西安电子科技大学芜湖研究院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem of poor lattice quality of the current gallium nitride HEMT device, and provide an epitaxial structure of a Si-based gallium nitride device and a preparation method thereof, which can improve the quality of the HEMT device

Method used

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  • Epitaxial structure of Si-based gallium nitride device
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Experimental program
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Effect test

Embodiment 1

[0018] 1. Provide a substrate L1, which is a silicon material used for epitaxial gallium nitride thin film, with a size range of 2-8 inches.

[0019] 2. The nucleation layer L2 is grown by PECVD at a temperature of 500° C., including the AlN layer L21 and the GaN layer L22 , and the total film thickness is 20 nm. Among them, the thickness of the ALN layer L21 is 2nm, the thickness of the GaN layer L22 is 2nm, and the cycle number is 5, see figure 2 .

[0020] 3. A buffer layer L3 is grown on the nucleation layer, and its structure is composed of InN / SiN / GaN cyclic growth, including an InN crystal nucleus layer L31, a network structure SiN thin layer L32, and a GaN leveling layer L33. Its growth temperature is 1130°C, and the total thickness of the film is 2um. Among them, the thickness of the InN crystal nucleus layer L31 is 10nm, the thickness of the network structure SiN thin layer L32 is 1nm, the thickness of the GaN leveling layer L33 is 70nm, and the number of cycles i...

Embodiment 2

[0025] 1. Provide a substrate L1, which is a silicon material used for epitaxial gallium nitride thin film, with a size range of 2-8 inches.

[0026] 2. The nucleation layer L2 including the AlN layer L21 and the GaN layer L22 is grown by PECVD at a temperature of 600° C., and the total thickness of the film is 40 nm. Among them, the thickness of the ALN layer L21 is 2nm, the thickness of the GaN layer L22 is 2nm, and the number of cycles is 10, see figure 2 .

[0027] 3. A buffer layer L3 is grown on the nucleation layer, and its structure is composed of InN / SiN / GaN cyclic growth, including an InN crystal nucleus layer L31, a network structure SiN thin layer L32, and a GaN leveling layer L33. Its growth temperature is 1130°C, and the total thickness of the film is 2um. Among them, the thickness of the InN crystal nucleus layer L31 is 10nm, the thickness of the network structure SiN thin layer L32 is 1nm, the thickness of the GaN leveling layer L33 is 70nm, and the number o...

Embodiment 3

[0032] 1. Provide a substrate L1, which is a silicon material used for epitaxial gallium nitride thin film, with a size range of 2-8 inches.

[0033] 2. The nucleation layer L2 is grown by MOCVD at a temperature of 800° C., including the AlN layer L21 and the GaN layer L22 , and the total thickness of the film is 25 nm. Among them, the thickness of the ALN layer L21 is 2nm, the thickness of the GaN layer L22 is 3nm, and the cycle number is between 5, see figure 2 .

[0034] 3. After the core layer is grown, a 10min high-temperature heat treatment is carried out, the temperature is between 1040 and 1070, and the atmosphere is a mixed gas of N2 / H2 / NH3. Continue to grow the buffer layer after heat treatment.

[0035] 4. A buffer layer L3 is grown on the nucleation layer, and its structure is composed of InN / SiN / GaN cyclic growth, including an InN crystal nucleus layer L31, a network structure SiN thin layer L32, and a GaN leveling layer L33. Its growth temperature is 1130°C, ...

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Abstract

An epitaxial structure of a Si-based gallium nitride device belongs to the technical field of microelectronics. The epitaxial structure comprises a substrate, a nucleating layer, a buffer layer, a high-resistance layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, wherein the nucleating layer is formed by ALN / GaN cyclic growth, and the buffer layer is formed by InN / SiN / GaN in a cyclic growth mode and comprises an InN crystal nucleus layer, a reticular structure SiN thin layer and a GaN filling layer. According to the invention, the ALN / GaN nucleating layer is circularly grown to relieve lattice mismatch and thermal mismatch of the substrate and the epitaxial layer, and the InN / SiN / GaN buffer layer can greatly reduce the dislocation density of the material and improve the lattice quality, thereby improving the electron mobility, breakdown voltage, leakage current and other characteristics of the HEMT device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the epitaxial preparation of semiconductor devices, an epitaxial structure of Si-based gallium nitride devices, and the prepared devices are mainly used in high-voltage and high-power applications. Background technique [0002] The third-generation semiconductor material, that is, the Wide Band Gap Semiconductor (WBGS for short) semiconductor material is developed after the first-generation silicon and germanium and the second-generation gallium arsenide and indium phosphide. Among the third-generation semiconductor materials, gallium nitride (GaN) has wide bandgap, direct bandgap, high breakdown electric field, low dielectric constant, high electron saturation drift velocity, strong radiation resistance and good chemical stability Such superior properties as germanium, silicon, and gallium arsenide have become key semiconductor materials for the manufacture of new-generat...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/20H01L29/778
CPCH01L29/0603H01L29/0684H01L29/205H01L29/778
Inventor 汪琼王东吴勇陈兴陆俊葛林男严伟伟何滇曾文秀王俊杰操焰崔傲袁珂陈军飞张进成
Owner 西安电子科技大学芜湖研究院
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