P-doped glass powder, preparation method of P-doped glass powder, and method for preparing positive silver slurry for solar battery from P-doped glass powder

A technology for solar cells and phosphorus glass, which is applied in the field of preparing front-side silver paste, can solve the problems of low photoelectric conversion efficiency and low phosphorus doping efficiency of crystalline silicon solar cells, and achieve high photoelectric conversion efficiency and high-efficiency doping effects

Active Publication Date: 2019-05-28
NORTHWEST UNIV(CN)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the low phosphorus doping efficiency of the phosphorus-doped glass prepared by the existing method and the photoelectric conversion of the crystalline silicon solar cell when the front-side silver paste for the solar cell prepared by using it is printed on the crystalline silicon solar cell sheet In order to solve the problem of low efficiency, a kind of phosphorus-doped glass powder and its preparation method and the method of using it to prepare front-side silver paste for solar cells are provided

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  • P-doped glass powder, preparation method of P-doped glass powder, and method for preparing positive silver slurry for solar battery from P-doped glass powder
  • P-doped glass powder, preparation method of P-doped glass powder, and method for preparing positive silver slurry for solar battery from P-doped glass powder
  • P-doped glass powder, preparation method of P-doped glass powder, and method for preparing positive silver slurry for solar battery from P-doped glass powder

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specific Embodiment approach 1

[0019] Specific embodiment one: In this embodiment, a phosphorus-doped glass powder consists of 1-10 parts by weight of PbO, 15-30 parts of Bi 2 o 3 , 15 to 25 parts of SiO 2 , 10 to 35 parts of TeO 2 , 5 to 15 parts of ZnO, 3 to 5 parts of MgO, 5 to 15 parts of B 2 o 3 Prepared with 1-10 parts of phosphorus source.

specific Embodiment approach 2

[0020] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the phosphorus source is phosphorus pentoxide, diammonium hydrogen phosphate, ammonium dihydrogen phosphate, calcium hydrogen phosphate, calcium phosphate, calcium pyrophosphate, phosphoric acid Potassium dihydrogen phosphate, dipotassium hydrogen phosphate, sodium acid pyrophosphate, sodium dihydrogen phosphate, disodium hydrogen phosphate, sodium phosphate, sodium pyrophosphate, calcium dihydrogen phosphate, phosphoric acid, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, acid Sodium pyrophosphate, trimetapyrophosphate, potassium dihydrogen phosphate, potassium pyrophosphate, potassium tripolyphosphate, sodium metaphosphate, calcium dihydrogen phosphate, calcium dihydrogen phosphate, potassium dihydrogen phosphate and dipotassium hydrogen phosphate species or a mixture of several of them. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0021] Specific embodiment three: the present embodiment is: a kind of preparation method of phosphorus-doped glass powder is finished according to the following steps:

[0022] 1. Weigh 1 to 10 parts of PbO and 15 to 30 parts of Bi by weight 2 o 3 , 15 to 25 parts of SiO 2 , 10 to 35 parts of TeO 2 , 5 to 15 parts of ZnO, 3 to 5 parts of MgO, 5 to 15 parts of B 2 o 3 and 1-10 parts of phosphorus source;

[0023] 2. Take 1 to 10 parts of PbO, 15 to 30 parts of Bi 2 o 3 , 15 to 25 parts of SiO 2 , 10 to 35 parts of TeO 2 , 5 to 15 parts of ZnO, 3 to 5 parts of MgO and 5 to 15 parts of B 2 o 3 Mix evenly to obtain mixed powder;

[0024] 3. Put the mixed powder in an aluminum crucible, then place the aluminum crucible in a high-temperature electric furnace with a temperature of 1200 ° C to 1400 ° C for 20 min to 60 min, and then quench the aluminum crucible in distilled water to room temperature to obtain coarse glass powder; Coarse glass powder is pulverized by a jet...

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Abstract

The invention provides P-doped glass powder, a preparation method of the P-doped glass powder, and a method for preparing positive silver slurry for a solar battery from the P-doped glass powder, andrelates to glass powder, a preparation method of the glass powder and a method for preparing the positive silver slurry from the glass powder. The invention aims at solving the problems that when P-doped glass is prepared by the existing method, the P doping efficiency is low; the positive silver slurry for solar battery prepared by the P-doped glass powder causes low incident photon-to-electron conversion efficiency of the crystal silicon solar battery when being printed onto the crystal silicon solar battery cells. The P-doped glass powder is prepared from PbO, Bi2O3, SiO2, TeO2, ZnO, MgO, B2O3 and a phosphorus source. The method comprises the steps of 1, material mixing; 2, mixed powder preparation; 3, melting; 4, P doping. The positive silver slurry for the solar battery prepared by the P-doped glass powder is prepared from the P-doped glass powder, silver powder and organic carriers. The method comprises the following steps of 1, material weighing and 2, grinding. The P-doped glass powder can be obtained.

Description

technical field [0001] The invention relates to a glass powder, a preparation method and a method for preparing front silver paste by using the same. Background technique [0002] Since the development of solar photovoltaic cells, there are many types. Among the many types of solar cells, the research and development of crystalline silicon solar cells is the earliest, and the preparation technology is the most mature. Therefore, improving the photoelectric conversion efficiency of crystalline silicon cells and reducing costs has always been the development goal of the photovoltaic industry. To achieve high efficiency of crystalline silicon solar cells, it will rely on the improvement of two technologies: one is to start from the silicon semiconductor material itself; the other is to start from the improvement of the existing crystalline silicon cell preparation process and technology, such as through the selective emitter (Selective Emitter, SE) application of high-efficien...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00H01B1/22H01L31/0224
Inventor 马生华王惠白晋波张绪周波方明
Owner NORTHWEST UNIV(CN)
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