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A preparation method for electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity

A technology of silicon nitride ceramics and surface chemistry, applied in the field of ceramic materials, can solve problems such as low efficiency, poor reliability, and easy cracks

Active Publication Date: 2021-08-20
YANGZHOU FINE ELECTRON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, whether it is directly ablated by high-power laser or modified by laser irradiation, the thermal effect will instantly cause the melting and vaporization of the material, and the ceramic remelting layer will inevitably be formed, and the ideal microscopic morphology cannot be obtained to ensure the electroless plating. The desired "lock-in effect"
In addition, the remelted layer material usually has the characteristics of high brittleness, its mechanical properties do not match with the ceramic substrate, it is loose and easy to fall off, which seriously affects the bonding force between the metal coating and the ceramic substrate
[0007] The above problems are more prominent when using laser to process silicon nitride ceramics: on the one hand, due to the extremely high hardness of silicon nitride, the strength can be maintained at a high temperature of 1700 °C without falling, and high-power lasers often have to be used to obtain ideal processing effects. Laser, when using high-power laser scanning, cracks, cracks and even material fragmentation are very easy to occur; multiple scanning with lower-power laser pulses may reduce the probability of cracks, but the efficiency is extremely low and the reliability is poor

Method used

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  • A preparation method for electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity
  • A preparation method for electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity
  • A preparation method for electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity

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Effect test

Embodiment 1

[0038] A preparation method for electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity, the specific steps are as follows:

[0039] The silicon nitride ceramic substrate is successively subjected to tape casting, laser scanning treatment on the surface of the green body, cold water washing, surface protection treatment, pressureless sintering, running water cleaning, degreasing, hot water washing, cold water washing, distilled water washing, electroless copper plating treatment, and protection. Atmospheric roasting treatment, copper electroplating treatment and anti-oxidation treatment to form a copper film on the surface, wherein:

[0040] (1) The main technological process of tape casting is as follows:

[0041] Weigh 30 grams of Si 3 N 4 Fine powder and sintering aid powder (sintering aid accounts for Si 3 N 4 Fine powder weight percentage 10wt%), add 40 grams of organic solvent (absolute ethanol and butanone are mixed in a ...

Embodiment 2

[0059] The specific steps of a preparation method for electroless copper plating on the surface of a silicon nitride ceramic with high thermal conductivity are as follows:

[0060] The silicon nitride ceramic substrate is successively subjected to dry pressing, surface laser scanning treatment, cold water washing, surface protection treatment, pressureless sintering, running water cleaning, degreasing, hot water washing, cold water washing, distilled water washing, electroless copper plating, and protective atmosphere roasting Treatment, electroplating copper treatment and anti-oxidation treatment to form a copper film on the surface, including:

[0061] (1) The main process of dry pressing is as follows:

[0062] The raw material used is Si 3 N 4 Fine powder, the sintering aid is alumina and yttrium oxide powder (weight ratio of alumina: yttrium oxide = 1:3), after adding sintering aid in the ratio of 10wt% of the raw material, the powder is ball-milled on a planetary ball ...

Embodiment 3

[0079] Example 3: Tape-molded silicon nitride body was selected, the laser scanning power was 15% (ie 3W), the scanning distance was 0.05mm, the protective atmosphere was nitrogen, and the calcination temperature was 350°C, and the remaining steps were the same.

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Abstract

The invention discloses a preparation method of electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity. Copper treatment and heat treatment in a protective atmosphere. This method forms a metal copper layer with strong adhesion and smoothness on the surface of the green body. It is easy to operate and high in processing efficiency. It can avoid the accumulation of laser thermal effects, save resources, and the surface roughness of ceramics is controllable.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, and in particular relates to a preparation method of chemical copper plating on the surface of silicon nitride ceramics with high thermal conductivity. Background technique [0002] Silicon nitride (Si 3 N 4 ) ceramics have the characteristics of high strength, high toughness, corrosion resistance, wear resistance and thermal shock resistance, and are widely used in aerospace, national defense, machinery, chemical industry and other fields. Metallizing the surface of silicon nitride ceramics can make it have the advantages of high electrical insulation, high mechanical strength, low expansion and high thermal conductivity and weldability of metals, which are widely used in semiconductors. , integrated circuits, microwave devices, aerospace and other fields. For silicon nitride ceramics, surface metallization can also be applied to the packaging of silicon nitride heating element devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/88C04B35/584C04B35/622
CPCC04B35/584C04B35/622C04B41/009C04B41/5127C04B41/88C04B2235/6025
Inventor 叶枫葛林丁锡锋蒋仁会
Owner YANGZHOU FINE ELECTRON TECH
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