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A transfer printing method suitable for micro-nano-sized barium titanate thin films

A technology of transfer printing and barium titanate, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as difficult barium titanate thin films and single crystal barium titanate integration, and achieve improved graphics accuracy, The bottom surface has good morphology and the effect of reducing the size of the graphics

Active Publication Date: 2020-10-16
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Monocrystalline barium titanate as a bulk material is difficult to integrate with silicon-based optoelectronic devices
There are also many preparation methods for the film of this material, and the thickness is mostly on the order of hundreds of nanometers. However, most of these methods have special requirements for the growth substrate material, and it is difficult to directly obtain a single crystal barium titanate film on a silicon substrate.

Method used

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  • A transfer printing method suitable for micro-nano-sized barium titanate thin films
  • A transfer printing method suitable for micro-nano-sized barium titanate thin films
  • A transfer printing method suitable for micro-nano-sized barium titanate thin films

Examples

Experimental program
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Effect test

Embodiment 1

[0038] like figure 2 As shown, the BTO film 3 with a size of 110 μm*110 μm in Embodiment 1 is pasted on the surface of the silicon waveguide covered by BCB after transfer printing.

[0039] A transfer printing method suitable for micro-nano size barium titanate (BTO) film, comprising the steps of:

[0040] (1) A LSMO film with a thickness of 200nm was grown on a STO substrate with a thickness of 500μm by pulsed laser deposition, and a BTO film with a thickness of 600nm was grown again,

[0041] (2) Use traditional electron beam lithography or deep ultraviolet lithography on the surface of the above-mentioned BTO film 3 to obtain a pattern of 110 μm*110 μm BTO film, and use argon ion etching to bombard the LSMO film layer and the BTO film layer to obtain BTO-LSMO After the second photolithography and development, the structure is formed. The whole structure is marked as A1. The front schematic diagram of the structure is as follows image 3 , where 1 is the STO substrate, 2 ...

Embodiment 2

[0048] like Figure 8 As shown, in Example 2, a strip-shaped BTO thin film 3 with a size of 50 μm*1000 μm was pasted on the surface of the silicon wafer covered by BCB after transfer printing.

[0049] A kind of transfer printing method applicable to micro-nano size barium titanate (BTO) film of the present invention comprises (1) (2) (3) (4) (5) (6) six steps, wherein (1) (3) ) (5) step is the same as in specific example 1. The (2)(4)(6) steps are different from the specific embodiment 1.

[0050] In step (2), a pattern of 50 μm*1000 μm BTO film is obtained by photolithography on the surface of the BTO film 3 using traditional electron beam lithography or deep ultraviolet lithography, and the LSMO layer and the BTO layer are bombarded with argon ion etching to obtain BTO -LSMO column, after the second photolithography and development, the structure A1 is formed;

[0051] In step (4), spin-coat photoresist on a silicon wafer with a thickness of 500 μm and a size of 1.5cm*1....

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Abstract

The invention discloses a transfer printing method suitable for a micro-nano size barium titanate thin film. The method comprises the following main steps: a lanthanum manganate (LSMO) film is grown on a strontium titanate (STO) substrate, and then a barium titanate (BTO) film is grown; a BTO thin film pattern is obtained after a surface of the above BTO is photoetched, the LSMO layer and the BTOlayer are removed via etching operation to obtain a BTO-LSMO column which is developed after being photoetched via photoresist, and an intermediate LSMO layer is removed via corroding operation through a corrosive liquid so as to form a square stool type BTO-photoresist composite structure; a target negative film is taken and photoetched to form a corresponding pattern of the above BTO thin film,a silicon wafer is etched to form a silicon column, a PDMS solution is spun and then cured to form a PDMS stamp; the PDMS stamp is used to tear down a BTO thin film from the BTO-photoresist compositestructure and transfer print the same on the target negative film on which benzocyclobutene is spin coated, the BTO thin film adhered on the target negative film is obtained, and transfer printing iscompleted.

Description

technical field [0001] The invention belongs to the field of photoelectric integrated devices, and in particular relates to a transfer printing method suitable for micro-nano-sized barium titanate thin films. Background technique [0002] With the continuous development of silicon-based optoelectronic integrated circuits, optoelectronic devices and sensors challenge the smaller micron scale. Perovskite-type ferroelectric oxides have always been a research hotspot because of their excellent comprehensive properties, and the research on thin film materials has gradually entered people's field of vision. With the continuous rapid development and innovation of technology, we are trying to make the above-mentioned ferroelectric materials into transferable thin films, and use transfer printing technology to integrate them on silicon-based optoelectronic devices, in order to achieve various new functions. device. [0003] Barium titanate (BTO) has excellent ferroelectric properti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02112H01L21/02263
Inventor 任宇轩彭超刘柳
Owner SOUTH CHINA NORMAL UNIVERSITY
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