Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ternary system osmium-tungsten diboride hard material as well as preparation method and application thereof

A hard material, boron compound technology, applied in the field of ternary osmium tungsten diboride hard material and its preparation, can solve the problems of increasing the final cost of the product, unfavorable application, etc., and achieve high hardness and chemical stability, process Simple, high-purity results

Inactive Publication Date: 2017-09-22
GUANGDONG UNIV OF TECH
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional methods for preparing transition metal osmium borides include direct reaction sintering, solid-state replacement and arc melting, etc., and these methods require high temperature and other conditions, which increases the final cost of the product and is unfavorable for its industrial application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ternary system osmium-tungsten diboride hard material as well as preparation method and application thereof
  • Ternary system osmium-tungsten diboride hard material as well as preparation method and application thereof
  • Ternary system osmium-tungsten diboride hard material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1. Preparation: In a glove box filled with argon gas, osmium powder (Os), tungsten powder (W) and boron powder (B) with a purity of 99.99% are mixed, wherein the molar ratio of osmium powder to tungsten powder is 10: 0. Os, W and boron powder (B) are mixed in a molar ratio of 1:3. A total of six tungsten carbide grinding balls were used, with a size of 11.20mm, and the mass ratio of the balls to the mixed powder was 4:1. Fix the tungsten carbide ball mill jar with powder and balls on the high energy ball mill. The total time of ball milling is 40h. In order to prevent the engine from overheating, every 1h of ball milling is stopped for 20min to obtain osmium boride powder.

[0034] 2. Test: The above powder is sampled, and its phase analysis is carried out by XRD. figure 1 As shown in (a), the main phase of the mixed powder after ball milling for 40 hours is ReB with hexagonal structure 2 TypeOsB 2Powder, no phases such as (osmium) Os tungsten) W and (boron) B were...

Embodiment 2

[0036] 1. Preparation: In a glove box full of argon, osmium powder (Os), tungsten powder (W) and boron powder (B) with a purity of 99.99% are used, wherein the mol ratio of osmium powder to tungsten powder is 9: 1. Os, W and B are mixed with a molar ratio of 1:3. A total of six tungsten carbide grinding balls were used, with a size of 11.20mm, and the mass ratio of the balls to the mixed powder was 4:1. Fix the tungsten carbide ball mill jar with powder and balls on the high energy ball mill. The total time of ball milling is 40h. In order to prevent the engine from overheating, every 1h of ball milling is stopped for 20min to obtain osmium tungsten diboride powder.

[0037] 2. Test: Take a sample of the above-mentioned powder, and use XRD to carry out phase analysis on it. figure 1 As shown in (b), the main phase of the mixed powder after ball milling for 40 hours is ReB with hexagonal structure. 2 Type Os 0.9 W 0.1 B 2 Powder, the synthesis process is a solid-phase di...

Embodiment 3

[0039] 1. Preparation: In a glove box full of argon, osmium powder (Os), tungsten powder (W) and boron powder (B) with a purity of 99.99% are used, wherein the mol ratio of osmium powder to tungsten powder is 8: 2. Os, W and B are mixed with a molar ratio of 1:3. A total of six tungsten carbide grinding balls were used, with a size of 11.20mm, and the mass ratio of the balls to the mixed powder was 4:1. Fix the tungsten carbide ball mill jar with powder and balls on the high energy ball mill. The total time of ball milling is 40h. In order to prevent the engine from overheating, every 1h of ball milling is stopped for 20min to obtain osmium tungsten diboride powder.

[0040] 2. Test: Take a sample of the above-mentioned powder, and use XRD to carry out phase analysis on it. figure 1 As shown in (c), the mixed powders were milled for 40 hours to obtain the main phase ReB with hexagonal structure. 2 Type Os 0.8 W 0.2 B 2 Powder, the synthesis process is a solid-phase diff...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Vickers hardnessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of inorganic non-metallic hard materials and discloses a preparation method of a ternary system osmium-tungsten diboride hard material. The preparation method comprises the following steps: adopting a mechanical and chemical method, utilizing high-energy ball milling equipment, taking high-purity osmium (Os), tungsten (W) and boron (B) power as a raw material and synthesizing osmium-tungsten diboride powder at a room temperature; then sintering at a high temperature under an argon gas protection atmosphere and densely sintering the synthesized osmium tungsten diboride powder to obtain the ternary system osmium-tungsten diboride hard material. The ternary system osmium-tungsten diboride hard material (Os1-xWxB2) has high density, high hardness and high temperature stability. The prepared osmium-tungsten diboride hard material is used in industrial applications such as cutting tools and grinding.

Description

technical field [0001] The invention belongs to the technical field of inorganic non-metallic hard materials, and more specifically relates to a ternary osmium-tungsten diboride (Os 1-x W x B 2 ) Hard materials and their preparation methods and applications. Background technique [0002] Due to its excellent physical and chemical properties such as high hardness, wear resistance, and good thermal stability, superhard materials have rapidly become one of the important basic functional materials in the field of modern industry and scientific and technological research. At present, the superhard materials used in industrial production are mainly diamond and cubic boron carbide, and their synthesis requires conditions such as high temperature and high pressure. Diamond is easily oxidized when heated to 800°C in air. In addition, when processing ferrous metal workpieces, carbon will penetrate into the workpiece, resulting in workpiece wear and work hardening. The thermal and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/626C04B35/65
Inventor 龙莹邹灿辉郑鑫莫杏源林华泰
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com