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Antimonide II superlattice infrared detector with planar structure and preparation method thereof

A technology of infrared detectors and planar structures, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as limited effects, unfinished processes, surface leakage currents of conductive channels on the surface of side walls, etc., to achieve Best performance, no surface leakage current, high reliability

Active Publication Date: 2017-10-24
苏州晶歌半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the mesa structure is used in the research and production of antimonide superlattice detectors, that is, the semiconductor material outside the working area is removed by etching process to realize the electrical isolation between the devices. However, after the etching is completed, due to the semiconductor The crystal continuity is broken, resulting in surface state and inversion layer on the side wall of the device, so that conductive channels appear on the surface of the side wall and surface leakage current is generated
Although researchers have adopted various methods such as depositing SiO 2 , polyimide, photoresist SU-8 and other dielectric materials to passivate the surface of the detector, but the effect is limited, and the process needs to be perfected

Method used

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  • Antimonide II superlattice infrared detector with planar structure and preparation method thereof
  • Antimonide II superlattice infrared detector with planar structure and preparation method thereof

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Effect test

Embodiment 1

[0055] Embodiment 1 uses metal-organic chemical vapor deposition (MOCVD) as a growth process to provide an n-type InAs substrate 10, and the growth sources are TMGa, TMIn, TMSb and AsH 3 , the dopant source n-type is Si 2 h 6 , p-type is DEZn. The growth temperature is about 530° C., and the reaction chamber pressure is 100 Torr. After high temperature treatment to remove impurities on the surface of the substrate, according to figure 1 The IR detector structure shown is grown sequentially:

[0056] (1) 0.5 μm InAs buffer layer 11, doped with Si, the concentration is 5×10 17 cm -3 ;

[0057] (2) 500-period InAs / GaSb superlattice absorption layer 12, InAs thickness is 4.8nm, GaSb thickness is 3nm, that is, the total thickness is 3.9μm, only Si is doped in InAs, and the average concentration is 2×10 16 cm -3 ;

[0058] (3) 100-period InAs / GaSb superlattice contact layer 13, the thickness of InAs is 3nm, the thickness of GaSb is 3nm, that is, the total thickness is 0.6μm...

Embodiment 2

[0062] Embodiment 2 uses molecular beam epitaxy (MBE) as the growth process to provide an n-type GaSb substrate 10, the growth source is solid single source Ga, In, As and Sb, and the n-type dopant source is Te. The growth temperature is about 450°C. After the substrate is degassed and impurity removed, according to the following figure 1 The IR detector structure shown is grown sequentially:

[0063] (1) 1.5 μm InAsSb buffer layer 11, doped with Te, the concentration is 1×10 17 cm -3 ;

[0064] (2) 600 cycles InAs / InAs 0.6 Sb 0.4 Superlattice absorption layer 12, InAs thickness 7nm, InAs 0.6 Sb 0.4 The thickness is 2nm, that is, the total thickness is 5.4μm, doped with Te, the concentration is 2×10 15 cm -3 ;

[0065] (3) 4μm GaSb contact layer 13, doped with Te, the concentration is 5×10 16 cm -3 ;

[0066] (4) 0.5 μm unintentionally doped AlGaSb passivation layer 14;

[0067] After the growth was completed, 2 μm SiO was deposited on the epitaxial wafer by plas...

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Abstract

The invention discloses an antimonide second class superlattice infrared detector with a planar structure and a preparation method thereof; the antimonide second class superlattice infrared detector comprises a lower electrode, an InAs / GaSb or InAs / InAsSb superlattice absorbed layer, an InAs / GaSb superlattice or GaSb or GaAsSb contact layer, and an upper electrode arranged in sequence in a set direction; a p type zone is also locally formed in the contact layer or the contact layer and the superlattice absorbed layer; the invention also discloses an infrared detector preparation method; the antimonide second class superlattice infrared detector uses the planar structure to prevent surface leak current caused by etching in a normal mesa structure, thus reducing dark current and noises of the infrared detector, and simplifying the manufacture technology of the antimonide second class superlattice infrared detector. In addition, an energy zone composition and material combination of the pin type detector are specially designed, thus ensuring photoproduction carrier collection not to be blocked by barriers, and effectively ensuring and improving infrared detector work performance.

Description

technical field [0001] The invention relates to an infrared detector, in particular to a pin-type antimonide II superlattice infrared detector based on a planar structure and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] Infrared technology is an important strategic and tactical means in the military, and it is widely used in missile early warning, low-light imaging, target tracking, photoelectric countermeasures and other fields. Under the needs of modern high-tech warfare, the infrared detection system has developed to the third generation, which has the characteristics of large area array, high frame rate, better thermal resolution, multi-color detection capability and real-time signal processing capability. Antimonide InAs / GaSb and InAs / InAsSb type II superlattice infrared detectors are considered to be the most ideal choices for the preparation of third-generation infrared detectors because of their good ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/0304H01L31/0352H01L31/18
CPCH01L31/03046H01L31/035236H01L31/105H01L31/1844Y02P70/50
Inventor 黄勇熊敏
Owner 苏州晶歌半导体有限公司
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