Modulated doped multi-period strain-compensated quantum well epitaxial layer and its growth method

Abstract

The invention discloses a modulation-doped multi-period strain-compensated quantum well epitaxial layer and a growth method thereof. Air pressure in a metal organic chemical vapor deposition reaction chamber is set as predetermined air pressure and reaction gas and an MO source are piped into the metal organic chemical vapor deposition reaction chamber, and the reaction gas and the MO source react under predetermined temperature so as to generate the modulation-doped multi-period strain-compensated quantum well epitaxial layer, wherein the reaction gas is phosphorane and arsine; and the MO source is trimethylaluminum, trimethylindium, trimethylgallium, triethylgallium, P-type doped source dimethylzinc or P-type doped source diethylzinc. The modulation-doped multi-period strain-compensated quantum well epitaxial layer generated by the method is a high-linearity AlGaInAs quantum well epitaxial layer, and compressive strain is increased so that auger recombination and interband absorption can be reduced, and the effect of improving the high temperature characteristic of the device and the external quantum efficiency, the internal quantum efficiency and the conversion efficiency of an active area quantum well and enhancing relaxation oscillation frequency can be achieved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a modulation doped multi-period strain compensation quantum well epitaxial layer and a growth method thereof. Background technique [0002] The semiconductor laser has developed from the initial operation at low temperature of 25°C to continuous operation at room temperature, and now it has developed to continuous operation at high temperature of 85°C. The active region of the semiconductor laser has developed from a homojunction to a single heterojunction, a double heterojunction, and a quantum well. (Single, multiple quantum wells) and other forms, in the final analysis, improve the external quantum efficiency, internal quantum efficiency and conversion efficiency of the semiconductor active layer material. [0003] In the prior art, the conduction band offset ΔEc=0.4ΔEg in the quantum well structure of AlGaInAs / InP material can only have a small electron confinement potenti...

AI Technical Summary

Problems solved by technology

However, after increasing the strain of the well layer material in the active region of the quantum well, the stress caused by high mismatch can easily cause lattice relaxation, from two-dimensional growth to three-dimensional growth, and indium atoms are easy to migrate to form In-rich "islands". High-quality quantum wells require two-dimensional growth, because three-dimensional growth will cause many defects, which will affect the luminous efficiency of quantum wells

[0005] Due to the increased strain of the well layer material in the quantum well active region and multi-period accumulation, the overall strain of the quantum well active region is further increased, which brings difficulties to the quality of epitaxial growth of large strain and multi-period quantum well materials

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