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A kind of preparation method of cerium-doped barium tantalate for gamma ray shielding

A technology of gamma ray and barium tantalate, which is applied in nanotechnology, chemical instruments and methods, tantalum compounds, etc. for materials and surface science, can solve the problems of excitation limitation in the visible light region and large forbidden band width, etc., and achieve composition Single, reduced bandgap width, and absorption-promoting effects

Inactive Publication Date: 2017-05-17
迪芬斯(北京)环保科技有限公司
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Problems solved by technology

[0003] Barium tantalate Ba 5 Ta 4 o 15 It is an inorganic functional material that has been studied more in recent years. It has good photocatalytic performance, but due to the 5 Ta 4 o 15 The band gap is large, and the excitation in the visible region is limited

Method used

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  • A kind of preparation method of cerium-doped barium tantalate for gamma ray shielding
  • A kind of preparation method of cerium-doped barium tantalate for gamma ray shielding
  • A kind of preparation method of cerium-doped barium tantalate for gamma ray shielding

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preparation example Construction

[0029] Such as figure 1 As shown, the preparation method of the cerium-doped barium tantalate for gamma ray shielding according to the embodiment of the present invention comprises the following steps:

[0030] S101: Put a certain amount of barium hydroxide in a beaker, use deionized water as solvent, stir until homogeneous at room temperature, add tantalum oxide powder to the above solution and mix, continue stirring for 20-60min, barium hydroxide and oxide The molar ratio of tantalum is 2:5-10;

[0031] S102: Add cerium nitrate Ce (NO 3 ) 3 , continue to stir for 60 minutes, put the mixed solution into the reaction kettle, react at 200°C-300°C for 2h-48h, wash and filter the product with deionized water, and dry it at 30°C-100°C to obtain the product is the final product.

[0032] Described cerium source is cerium nitrate or cerium oxide; (Ce(NO 3 ) 3 or (CeO 2 ).

[0033] In the present invention, the molar ratio of barium hydroxide and tantalum oxide is 2:5-10.

...

Embodiment 1

[0039] Put barium hydroxide in a beaker, use deionized water as solvent, stir until homogeneous at room temperature, add tantalum oxide powder to the above solution and mix, continue stirring for 20-60min, and finally add cerium nitrate Ce (NO 3 ) 3 , continue to stir for 60 minutes, put the mixed solution into the reaction kettle, react at 200°C-300°C for 2h-48h, wash and filter the product with deionized water, and dry it at 30°C-100°C to obtain the product That is the final product, wherein: the molar ratio of barium hydroxide and tantalum oxide is 2:5-10. The moles of cerium and the total moles of cerium and barium are 2%-16%.

[0040] The structure and properties of the product were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), diffuse reflection and fluorescence emission spectroscopy (PL), respectively. From figure 2 It can be seen that the XRD result shows...

Embodiment 2

[0042] Ba doping of EPD and Ce by two-roll mill 5 Ta 4 o 15 Mix the powder, add raw rubber, zinc oxide, stearic acid, cross-linking agent TAIC, anti-aging agent 4010A, Ce-doped Ba 5 Ta 4 o 15Powder, paraffin oil, vulcanizing agent DBPH. The rubber material was vulcanized on a flat vulcanizing machine, and the vulcanization conditions were 160°C, 13MPa, 30min. The mass proportion of the inorganic powder in the prepared composite material is about 40%.

[0043] Use 3 "x3" NaIγ spectrometer system (provided by Beijing Institute of Chemical Defense, and its radioactive source is 241 Am, the energy is 59.5keV, and the detector used is NaI(TI) to test the gamma ray shielding performance of the composite material, the results are as follows Figure 7 shown.

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Abstract

The invention discloses a preparation method of cerium-doped barium tantalite used for gamma ray shielding. The preparation method of the cerium-doped barium tantalite comprises the following steps of: adopting a hydrothermal method; dissolving Ba(OH)2 with a certain mol concentration into an aqueous solution, uniformly mixing, then carrying out magnetic stirring for 20-60 minutes, then pouring Ta2O5 powder into the mixed solution, continuously stirring, then adding a cerium source, continuously stirring for 60 minutes, then transferring the solution into a reaction kettle, carrying out hydrothermal reaction for 2-48 hours at the temperature of 200-300 DEG C, repeatedly washing a product with deionized water and absolute ethanol, and naturally drying at room temperature. The prepared Ce-doped Ba5Ta4O15 has a multilevel structure composed of secondary lamellar crystals, thickness of the lamellar crystals is 10-20nm, morphology is regular, the repeatability is high, the cost is low, preparation is simple, and the Ce-doped Ba5Ta4O15 can be applicable to large-scale production; and the Ce-doped Ba5Ta4O15 has a good gamma ray protection effect and also has a relatively high application value in the fields of photocatalysis, solid state luminescence and the like.

Description

technical field [0001] The invention belongs to the technical field of inorganic crystal materials, and in particular relates to a preparation method of cerium-doped barium tantalate used for gamma ray shielding. Background technique [0002] Doping is one of the most important methods for modifying inorganic crystal materials. In lithium-ion battery electrode materials, photocatalytic materials, magnetic semiconductor materials and photorefractive materials, improving the performance of materials by doping has been widely used. certain reports. The doping behavior when impurity ions enter the crystal lattice determines the structure of the doped crystal, and the energy level of the impurity determines many functional properties of the doped inorganic crystal. [0003] Barium tantalate Ba 5 Ta 4 o 15 It is an inorganic functional material that has been studied more in recent years. It has good photocatalytic performance, but due to the 5 Ta 4 o 15 The band gap is larg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G35/00B82Y30/00
CPCB82Y30/00C01G35/00C01P2002/72C01P2002/85C01P2004/03C01P2004/62C01P2006/60
Inventor 周元林贾夏冰郑剑李银涛
Owner 迪芬斯(北京)环保科技有限公司
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