Self-supporting physical unclonable key and preparation method thereof

A self-supporting, physical technology, applied in the fields of identity authentication and anti-counterfeiting, quantum key distribution, and quantum authentication, it can solve problems such as poor compatibility, and achieve the effects of low cost, high reliability, and high stability

Inactive Publication Date: 2016-04-06
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a self-supporting physical unclonable key and a preparation method thereof, aiming to prepare a stable, reliable, flexible, practical, and transferable physical unclonable key through a low-cost, simple and easy preparation method. In order to overcome the defect of poor compatibility in integrated microsystems, it can meet the practical needs of quantum authentication and quantum key distribution in practical applications.

Method used

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  • Self-supporting physical unclonable key and preparation method thereof
  • Self-supporting physical unclonable key and preparation method thereof
  • Self-supporting physical unclonable key and preparation method thereof

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preparation example Construction

[0038] Such as figure 2 As shown, a method for preparing a self-supporting physical unclonable key comprises the following steps:

[0039] First, a layer of release agent is grown on the substrate.

[0040] Secondly, a composite film formed by embedding disordered micro-nano particles in a transparent medium is grown on the release agent layer.

[0041] Again, use a solvent to dissolve the release agent. If a soluble substrate is used, the substrate can also be dissolved directly.

[0042] Finally, the composite film in which the disordered micro-nano particles separated from the solvent are embedded in a transparent medium is taken out and dried to obtain a self-supporting physical unclonable key.

[0043] The resulting self-supporting physically unclonable key, such as figure 1As shown, it includes a number of disordered micro-nano particles 11 and a transparent medium 12, and a number of disordered micro-nano particles 11 are embedded in the transparent medium 12 to fo...

Embodiment 1

[0048] Such as image 3 As shown, the preparation method of this self-supporting physical unclonable key is as follows:

[0049] First, grow a layer of potassium chloride (KCl) with a thickness of 10 μm on a quartz glass substrate 24 with a thickness of 1 mm as a release agent 23;

[0050] Then, a sample of a composite film formed by growing TiO2 and ZnO disordered micro-nano particles 21 embedded in a transparent medium 22 on the KCl release agent 23 layer was obtained. The specific method is: mix TiO2 and ZnO micro-nano particles with a particle size distribution of 50-2000nm and an average particle size of 200nm into the UV-curable adhesive liquid at a volume fraction of 1:1, perform ultrasonic stirring and dispersion, and then grow by spin coating. On the 23rd layer of KCl release agent, the thickness is 20 μm;

[0051] Secondly, put the sample under ultraviolet light for irradiation curing;

[0052] Again, put the cured sample into deionized water to dissolve the KCl r...

Embodiment 2

[0055] Such as Figure 4 As shown, the preparation method of this self-supporting physical unclonable key is as follows:

[0056] First, spin-coat a layer of AZ4620 photoresist with a thickness of 6 μm on a silicon wafer substrate 34 with a thickness of 300 μm as a release agent 33;

[0057] Then, spray a layer of BaTiO3 disordered micro-nano particles 31 with a particle size distribution of 100-6000 nm and an average particle size of 300 nm on the photoresist release agent 33 layer, with a thickness of 20 μm to form a porous structure;

[0058] Secondly, a 10 μm-thick AlN transparent medium 32 is grown on the BaTiO3 disordered micro-nano porous layer by MOCVD method to fill the inside of the hole and protect the surface of the porous structure, so that a compound layer grown on the photoresist release agent 33 layer is obtained. film samples;

[0059] Again, put the sample into acetone to dissolve the photoresist stripper 33;

[0060] Finally, the composite film of BaTiO3 ...

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Abstract

The invention discloses a self-supporting physical unclonable key and a preparation method thereof. The preparation method comprises the following steps: growing a release agent on a substrate, and growing a composite film formed by embedding disordered micro / nano-particles into a transparent medium on a release agent layer; and dissolving the release agent with a solvent, taking the composite film removed by the solvent out, and drying the composite film to obtain the self-supporting physical unclonable key formed by embedding the disordered micro / nano-particles into the transparent medium. The self-supporting physical unclonable key has high stability and high reliability, and is suitable for serving as a self-supporting structure. The preparation method is low in cost, simple, convenient and feasible, and has practicability. The obtained self-supporting physical unclonable key is small in size and not limited by any substrate, and can be transferred onto various substrates to use and embedded into a conventional security authentication card or directly applied to highly-integrated quantum authentication and quantum key distribution microsystems.

Description

technical field [0001] The invention relates to the fields of quantum authentication, quantum key distribution, identity authentication and anti-counterfeiting, in particular to a self-supporting physical unclonable key and a preparation method thereof. technical background [0002] As we all know, smart IC cards have been widely used in many important fields such as ID cards, bank cards, access control cards, and traffic cards. However, this kind of IC card based on the principle of classical electromagnetic induction has potential safety hazards and is vulnerable to illegal access, tracking and eavesdropping. , forgery and tampering, replay attacks and other security threats. In recent years, there have been many vicious incidents such as bank card information leakage and payment card being stolen by hackers. Therefore, it is imminent to develop the next generation identity security authentication technology. Among them, Quantum Secure Authentication (Quantum Secure Auth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04L9/32H04L9/08B05D7/24
CPCH04L9/3278B05D7/24H04L9/0852
Inventor 陈飞良李倩李沫龙衡姚尧孙鹏高铭代刚张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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