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ZnO grading nanoarray on graphene substrate and preparation method and application thereof

A technology of graphene nanosheets and nanoarrays, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as uneven distribution, lower device operating temperature, and addition of foreign impurities, etc., to achieve Effects of avoiding contamination, easy access, and low defect density

Inactive Publication Date: 2015-09-09
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ZnO seed layer of the hydrothermal method cannot be evenly distributed on the graphene substrate, so it is necessary to pre-deposit other modification layer substances on the graphene, such as conductive polymers, so that foreign impurities are added, and the addition of organic substances reduces the operating temperature of the device

Method used

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  • ZnO grading nanoarray on graphene substrate and preparation method and application thereof
  • ZnO grading nanoarray on graphene substrate and preparation method and application thereof
  • ZnO grading nanoarray on graphene substrate and preparation method and application thereof

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Experimental program
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Embodiment 1

[0028] The preparation method of the hierarchical ZnO nano-array grown on the graphene nanosheet substrate in this embodiment comprises the following steps:

[0029] (1) Using graphene nanosheets as the substrate: Spin-coat the prepared graphene nanosheets (5-15um in diameter, 0.5nm in thickness, and 0.1mg / ml in concentration) on conventional substrates such as n-Si substrates , the number of spin coatings is 3 times, and the spin coating speed is 1000rmp;

[0030] (2) Non-catalytic growth of hierarchical ZnO nanoarrays by CVD method: the above-mentioned graphene nanosheet spin-coated substrate was placed in a CVD horizontal tube furnace, and non-catalytic growth of hierarchical ZnO nanoarrays was carried out by common chemical vapor deposition CVD method. By controlling the process parameters of the tube furnace: atmosphere flow rate (oxygen flow rate is 40 sccm, argon gas rate is 40 sccm), growth temperature is 600°C, growth time is 120 min, and the graphene substrate is pla...

Embodiment 2

[0036] The preparation method of the hierarchical ZnO nano-array grown on the graphene nanosheet substrate in this embodiment comprises the following steps:

[0037] (1) Using graphene nanosheets as the substrate: Spin-coat the prepared graphene nanosheets (50-100um in diameter, 2nm in thickness, and 1mg / ml in concentration) on other substrates, Si substrate, sapphire substrate, etc. Conventional substrates such as bottoms, the number of times of spin coating is 1 time, and the spin coating speed is 6000rmp;

[0038] (2) Non-catalytic growth of hierarchical ZnO nanoarrays by CVD method: the above-mentioned graphene nanosheet spin-coated substrate was placed in a CVD horizontal tube furnace, and non-catalytic growth of hierarchical ZnO nanoarrays was carried out by common chemical vapor deposition CVD method. By controlling the process parameters of the tube furnace: atmosphere flow rate (oxygen flow rate is 200 sccm, argon gas rate is 200 sccm), growth temperature is 800°C, gr...

Embodiment 3

[0041] The preparation method of the hierarchical ZnO nano-array grown on the graphene nanosheet substrate in this embodiment comprises the following steps:

[0042] (1) Using graphene nanosheets as the substrate: Spin-coat the prepared graphene nanosheets (15-50um in diameter, 1nm in thickness, and 0.5mg / ml in concentration) on other substrates, n-Si and sapphire Conventional substrates such as substrates, the number of spin coatings is 2 times, and the spin coating speed is 3000rmp;

[0043] (2) Non-catalytic growth of hierarchical ZnO nanoarrays by CVD method: the above-mentioned graphene nanosheet spin-coated substrate was placed in a CVD horizontal tube furnace, and non-catalytic growth of hierarchical ZnO nanoarrays was carried out by common chemical vapor deposition CVD method. By controlling the process parameters of the tube furnace: atmosphere flow rate (oxygen flow rate is 100 sccm, argon gas is 100 sccm), growth temperature is 700°C, growth time is 60 min, and the ...

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Abstract

The invention discloses a ZnO grading nanoarray on a graphene substrate and a preparation method and application thereof. A graphene nanosheet substrate and grading ZnO nanoarray on the graphene nanosheet substrate area included. The grading ZnO nanoarray on the graphene nanosheet substrate is grown without catalytic CVD graphene. The invention also discloses the preparation method and application of the grading ZnO nanoarray. Compared with the prior art, the invention has the advantages of no need of deposition metal catalyst and deposition of other nucleation layer; and the prepared ZnO nanoarray can be transferred to a flexible substrate as well as to a high thermal conductivity substrate, and is conducive to the preparation of efficient, flexible, high-performance ZnO-based devices.

Description

technical field [0001] The invention relates to a ZnO hierarchical nano-array and a preparation method thereof, in particular to a ZnO hierarchical nano-array on a grown graphene substrate, a preparation method and an application thereof. Background technique [0002] Zinc oxide ZnO (with a room temperature bandgap width of 3.37eV) is a direct bandgap semiconductor material of the II-VI wurtzite structure. The binding energy of bound excitons is as high as 60meV. At the same time, zinc oxide is rich in raw materials, low in price, and environmentally friendly. Advantages, are widely used in surface acoustic wave devices, microelectronics and optoelectronic devices and other fields. At present, one-dimensional ZnO nanoarrays have been confirmed to have unique physical properties, such as quantum size effects, surface effects, etc., and are currently the frontier and hot spot in the field of international nano-optoelectronic devices. One-dimensional ZnO nanoarrays are importa...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B29/16H01L31/0296H01L33/28H01L51/42
CPCY02E10/549Y02P70/50
Inventor 杨慧李岚
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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