Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A copper-copper metal thermocompression bonding method

A technology of thermocompression bonding and copper metal, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of complex process and many times of sputtering, and achieve low process cost, simple process and reliability good sex effect

Inactive Publication Date: 2017-10-13
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a copper-copper metal thermocompression bonding method, which is used to solve the problems of many sputtering times and complicated processes before bonding in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A copper-copper metal thermocompression bonding method
  • A copper-copper metal thermocompression bonding method
  • A copper-copper metal thermocompression bonding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0048] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a copper-copper metal thermocompression bonding method, the method at least includes the steps of: first providing a first wafer to be bonded and a second wafer, the first wafer includes a first substrate , the first passivation layer and the first Ti-Cu alloy thin film, the second wafer includes a second substrate, the second passivation layer and the second Ti-Cu alloy thin film; The surface of the first Ti-Cu alloy film and the surface of the second Ti-Cu alloy film of the second disc are bonded by thermocompression; finally annealing is carried out in a protective gas to make the Ti atoms in the first Ti-Cu alloy film Diffusion to the surface of the first passivation layer, the Ti atoms in the second Ti-Cu alloy film diffuse to the surface of the second passivation layer, and finally form a Ti adhesion / barrier layer on the surface of the first and second passivation layer, and Cu atoms diffuse to the bonding surface to realize bonding. The method of the present invention only needs to co-sputter the two substrates once before bonding, the number of sputtering is reduced by half, the process is relatively simple, the reliability is good, and the process cost is low. Finally, the annealing treatment is diffused to form Ti Adhesion / barrier layer and enables better copper bonding.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and relates to the bonding of wafers in the field of three-dimensional packaging, in particular to a copper-copper metal thermocompression bonding method. Background technique [0002] With the reduction of chip size and the improvement of integration, the traditional two-dimensional integration technology encounters an insurmountable development bottleneck. Compared with two-dimensional integration technology, three-dimensional integration technology can realize chip multi-function, improve chip integration, reduce signal delay, and reduce power consumption. Three-dimensional integration technology can generally be divided into transistor stacking, die-level bonding, die-wafer bonding, and wafer-level bonding. Among them, wafer-level bonding is the most ideal implementation form and can be used for heterojunction integration. The cost is low and the output is high. The interconnection betwee...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/603
CPCH01L24/03H01L24/27H01L24/83H01L2224/03011H01L21/603
Inventor 朱春生罗乐徐高卫宁文果
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com