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GaN base LED epitaxial structure and manufacturing method thereof

An epitaxial structure and epitaxial growth technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large lattice mismatch between sapphire substrate and GaN material, low photoelectric conversion efficiency of LED, and high dislocation density, so as to avoid The effect of quantum efficiency drop, defect density reduction, and fabrication process simplification

Active Publication Date: 2015-02-04
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the problems of low photoelectric conversion efficiency, high heat generation, large lattice mismatch between sapphire substrate and GaN material, and high dislocation density in the prior art.

Method used

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  • GaN base LED epitaxial structure and manufacturing method thereof
  • GaN base LED epitaxial structure and manufacturing method thereof
  • GaN base LED epitaxial structure and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0048] 0.005wt.% Ce 2 o 3 The powder is mixed into the YAG powder, fully mixed by wet ball milling, and dried to obtain the fluorescent ceramic powder raw material. The fluorescent ceramic powder raw material is formed into an embryo body by cold isostatic pressing. Put the green body into a vacuum high-temperature sintering furnace, the sintering temperature is 1450°C, and the sintering time is 10 hours. The thickness of the sintered transparent ceramic sample is 600 μm after thinning and surface fine polishing, and the surface roughness is 3 nm. Put this Ce:YAG transparent ceramic material as the substrate into the metal organic compound chemical vapor deposition equipment, perform high-temperature cleaning treatment in a hydrogen atmosphere at 800°C for 20 minutes, then drop the temperature to 500°C, and grow a low-temperature AlN buffer layer with a thickness of 15nm; continue Grow a low-temperature GaN buffer layer with a thickness of 300nm; increase the temperature to...

Embodiment 2

[0050] 0.3wt.% Ce 2 O, the powder is blended into YAG powder, fully mixed by wet ball milling, and the fluorescent ceramic powder raw material is obtained after drying. The fluorescent ceramic powder raw material is formed into an embryo body by cold isostatic pressing. Put the green body into a vacuum high-temperature sintering furnace, the sintering temperature is 1850°C, and the sintering time is 15 hours. The sintered transparent ceramic sample has a thickness of 450 μm and a surface roughness of 2 nm after thinning and surface fine polishing. Put the Ce:YAG ceramic material as the substrate into the metal organic compound chemical vapor deposition equipment, perform high-temperature cleaning treatment in a hydrogen atmosphere at 1400°C for 20 minutes, then drop the temperature to 700°C, and grow a low-temperature AlN buffer layer with a thickness of 60nm; continue to grow 50nm thick low-temperature GaN buffer layer; raise the temperature to 1200°C to grow a 4μm-thick hi...

Embodiment 3

[0052] 1.2wt.% Gd 2 o 3 powder with 25wt.% Gd 2 o 3 Blended into YAG powder, fully mixed by wet ball milling, and dried to obtain fluorescent ceramic powder raw materials. The fluorescent ceramic powder raw material is formed into an embryo body by cold isostatic pressing. Put the green body into a vacuum high-temperature sintering furnace, the sintering temperature is 1830°C, and the sintering time is 12 hours. The sintered transparent ceramic sample has a thickness of 350 μm and a surface roughness of 1 nm after thinning and surface fine polishing. Put the Ce:YAG ceramic material as the substrate into the metal organic compound chemical vapor deposition equipment, perform high-temperature cleaning treatment in a hydrogen atmosphere at 1300°C for 15 minutes, then drop the temperature to 500°C, and grow a low-temperature AlN buffer layer with a thickness of 60nm; To 700°C, grow a 50nm-thick low-temperature GaN buffer layer; raise the temperature to 1100°C, grow a 4μm-thic...

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Abstract

The present disclosure provides GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may comprise: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluoresent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re 3 Al 5 O 12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such a LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce the production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, pattering the substrate and then laterally growing a GaN based epitaxial structure.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED) can directly convert electrical energy into light energy. The LED chip is made up of two parts, one is a P-type semiconductor, in which holes dominate, and the other is an N-type semiconductor, in which electrons dominate. When these two kinds of semiconductors couple together, between them, just form a "P-N junction". When the current acts on the chip through the wire, the electrons will be pushed to the P area, and in the P area, the electrons will recombine with the holes, and then energy will be emitted in the form of photons, which is the principle of LED luminescence. [0003] As a new type of light source, LED has achieved unprecedented development due to its incomparable advantages such as energy saving, environmental protecti...

Claims

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Application Information

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IPC IPC(8): H01L33/08H01L33/00
CPCH01L33/02H01L33/32H01L33/0025H01L33/06H01L33/502H01L33/007H01L33/00H01L33/025H01L33/08
Inventor 曹永革刘著光邓种华陈剑李军廷费斌杰郭旺唐飞黄秋凤袁轩一
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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