Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof

Abstract

The invention relates to a busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and a manufacturing method thereof, belongs to the technical field of power semiconductor devices and power electronics and mainly solves the problems of low operational reliability of devices, poor surge current capacity and overload capacity of IGBT devices and small contact areas of chips and connection lines in aluminum wire bonding. The busbar connection type high-performance IGBT module is mainly characterized by comprising a shell, a bottom plate, electrodes, semiconductor chips, DBCs, busbars, molybdenum plates, soldering fluxes and the like. The semiconductor chips, the DBCs, the electrodes, the busbars, the molybdenum plates and the soldering fluxes are packaged in the shell, and the chips, the DBCs and the electrodes are connected through the busbars. A busbar connection method includes: sequentially assembling all the parts into a special tool, fastening and welding in a vacuum furnace. The busbar connection type high-performance IGBT module and the manufacturing method thereof are pretty applicable to high-frequency, high-power and high-reliability semiconductor devices and have the advantages that frequency characteristics of the IGBT devices can be remarkably improved to further improve switching performance of the devices. Compared with the prior art, the busbar connection type high-performance IGBT module and the manufacturing method thereof have the advantages that investment is saved, and production and processing cycle is shortened.

Description

technical field [0001] The invention belongs to the technical fields of semiconductor devices and power electronics. It specifically relates to a power semiconductor device, which is mainly used in high-power variable current power supplies, such as frequency converters, motor soft starters, traction power supplies, UPS, and the like. Background technique [0002] The IGBT module is a new type of power semiconductor device that can be turned off by itself. One, or two, or more IGBT chips and other semiconductor device chips are packaged in one shell, and its core component is the IGBT chip. Existing IGBT module structure such as figure 2 As shown, it includes housing, bottom plate 6, DBC board (ceramic double-sided copper clad board) 5, electrode 1, aluminum wire 8, 10, molybdenum sheet 3, IGBT (insulated gate bipolar transistor) chip 9, gate lead 7, among which The IGBT chip 9 , the DBC board 5 and the electrodes 1 are connected to each other through aluminum wires 8 and ...

AI Technical Summary

Problems solved by technology

However, since the IGBT chip 9, the DBC board 5, and the electrodes 1 are connected to each other through aluminum wires 8 and 10, the contact between the chip and the connecting wire is not sufficient, the surge current capability and overload capability of the IGBT device are not high enough, and the device The problem of insufficient work reliability

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