Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof

Abstract

The invention relates to an additive for acidic texturing liquid of polycrystalline silicon wafers and an application thereof. The additive comprises the following components: pentaerythritol, anhydrous sodium acetate, polyethylene glycol and deionized water. An acidic texturing method using the additive comprises the following steps: 1) dissolving pentaerythritol, anhydrous sodium acetate and polyethylene glycol in deionized water to prepare the additive; 2) dissolving hydrofluoric acid and nitric acid in deionized water to prepare a mixed acid solution, and then, adding the additive into the mixed acid solution to obtain acidic texturing liquid; 3) soaking a mortar cut polycrystalline silicon wafer or a diamond wire cut polycrystalline silicon wafer in the acidic texturing liquid for texturing. By adopting the additive provided by the invention, after the texturing operation, the reflectivity of the diamond wire cut polycrystalline silicon wafer is about 6% less than the reflectivity of the diamond wire cut polycrystalline silicon wafer in a conventional texturing process, and the reflectivity of the mortar cut polycrystalline silicon wafer is about 3-5% less than the reflectivity of the mortar cut polycrystalline silicon wafer in the conventional texturing process.

Description

technical field [0001] The invention relates to an additive for acidic texturing liquid of polycrystalline silicon wafers and its application, in particular to an additive for acidic texturing of polycrystalline silicon wafers which can be simultaneously applied to mortar cutting and diamond wire cutting, and a method for acid texturing using the additive. Background technique [0002] At present, the cutting of crystalline silicon wafers used in the photovoltaic field mainly adopts the mortar multi-wire cutting technology, but this technology has problems such as low cutting process efficiency, high cutting processing costs, and large discharge pollution of waste mortar after cutting. In contrast, solid abrasive diamond wire saw cutting (abbreviated as diamond wire cutting) technology has received more and more attention due to its advantages of high cutting efficiency, low cutting processing cost and clean environment, and is expected to become Future directions of materia...

AI Technical Summary

Problems solved by technology

The patent is in HF-HNO 3 Add H to the system 2 SO 4 or H 3 PO 4 , through H 2 SO 4 or H 3 PO 4 Catalysis and buffering effect to control the reaction rate, thereby reducing the surface reflectivity of the silicon wafer after texturing, but this patent needs to add a large amount of H 2 SO 4 or H 3 PO 4 To achieve the goal of reducing the reflectivity, the cost of texturing is relatively high, and the patented texturing system is an HF-rich system. After texturing, dark lines formed by deep corrosion pits are prone to appear on the surface of silicon wafers, which will affect the photoelectric conversion of solar cells. Efficiency adversely affected

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