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Ytterbium-doped lutetium-gadolinium-gallium garnet laser crystal and its preparation method and application

A technology of ytterbium lutetium gadolinium gallium and garnet is applied in the field of new laser crystals and their growth and application. and other problems, to achieve the effect of long upper energy level lifetime, excellent thermal and spectral properties, and high quantum efficiency

Inactive Publication Date: 2016-04-20
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yb in crystal 3+ Inhomogeneous doping will lead to poor optical uniformity of the crystal, which will directly affect the beam quality of the laser
In addition, when the segregation coefficient is much greater than 1, it will bring a series of problems to crystal growth, such as: component supercooling, growth interface instability, etc.

Method used

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  • Ytterbium-doped lutetium-gadolinium-gallium garnet laser crystal and its preparation method and application
  • Ytterbium-doped lutetium-gadolinium-gallium garnet laser crystal and its preparation method and application
  • Ytterbium-doped lutetium-gadolinium-gallium garnet laser crystal and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Example 1: x=0.05, y=0.05, ytterbium-doped lutetium-gadolinium-gallium garnet crystal chemical formula is Yb 0.15 Lu 0.15 Gd 2.7 Ga 5 o 12

[0043] The preparation method of doped ytterbium lutetium gadolinium gallium garnet crystal is as follows:

[0044] (1) Synthesis of polycrystalline material by solid phase sintering method

[0045] The initial raw material is Yb 2 o 3 、Lu 2 o 3 、Gd 2 o 3 and Ga 2 o 3 , with a purity of 99.99%. The chemical reaction equation is as follows:

[0046] 0.15Yb 2 o 3 +0.15Lu 2 o 3 +2.7Gd 2 o 3 +5Ga 2 o 3 =2Yb 0.15 Lu 0.15 Gd 2.7 Ga 5 o 12

[0047] According to Yb 0.15 Lu 0.15 Gd 2.7 Ga 5 o 12 The stoichiometric ratio weighs the corresponding raw material Yb 2 o 3 、Lu 2 o 3 、Gd 2 o 3 and Ga 2 o 3 , considering the presence of Ga during crystal growth 2 o 3 The volatilization and decomposition of Ga 2 o 3 Excess 2wt.% (Ga calculated by stoichiometric ratio 2 o 3 mass meter). Then put into the...

Embodiment 2

[0052] Example 2: x=0.05, y=0.15, ytterbium-doped lutetium-gadolinium-gallium garnet crystal chemical formula is Yb 0.45 Lu 0.15 Gd 2.4 Ga 5 o 12

[0053] According to Yb 0.45 Lu 0.15 Gd 2.4 Ga 5 o 12 The stoichiometric ratio weighs the corresponding raw material Yb 2 o 3 、Lu 2 o 3 、Gd 2 o 3 and Ga 2 o 3 , and make Ga 2 o 3 Excess 3wt.% (Ga calculated by stoichiometric ratio 2 o 3 mass meter), then fully mixed, and the mixing time was 50 hours. Use a hydraulic press to press the raw material into a cylindrical block, put it into a corundum crucible, and use a sintering furnace to calcinate at 1350 ° C for 30 hours to obtain the ytterbium-doped lutetium-gadolinium-gallium garnet polycrystalline material.

[0054] (2) Crystal growth

[0055] As described in step (2) in Example 1, the difference is: during the crystal growth process, the pulling speed is reduced to: 0.5mm / hour; after the crystal growth is completed and stripped, the cooling rate is 40°C / hour...

Embodiment 3

[0057] As described in Example 1, the difference is that the liquid phase method is used to synthesize the polycrystalline material

[0058] Raw material Yb 2 o 3 、Lu 2 o 3 、Gd 2 o 3 and Ga 2 o 3 React with concentrated nitric acid (mass fraction about 65%), and add hydrochloric acid (mass fraction about 35%) of 10% of the total mass of raw materials to promote the reaction process, and obtain Yb(NO 3 ) 3 , Lu(NO 3 ) 3 , Gd(NO 3 ) 3 and Ga(NO 3 ) 3 Four nitrate mixed solutions, then adjust the pH value of the mixed solution to 4.5 with ammonia water, then slowly add 2mol L -1 ammonium bicarbonate solution until no bubbles are generated in the solution, at which point the pH=7. The obtained precipitate was centrifuged out by a centrifuge, then washed with distilled water and centrifuged again, and the operation was repeated twice. Then the precipitate is dried in a drying oven, pressed into thin sheets by a press and calcined at 800°C for 10 hours to obtain a po...

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Abstract

The invention provides an ytterbium, lutecium, gadolinium and gallium doped garnet laser crystal, a preparation method and applications thereof. The formula of the crystal is (Yb<y>Lu<x>Gd<1-x-y>)3Ga5O12, wherein the x is larger than 0 and smaller than 1, the y is not smaller than 0.01 and not larger than 0.5, and the sum of x and y is not larger than 1. Yb3+ is taken as the activated ion and can achieve continuous and impulse laser output near 1 [mu]m under the pumping of laser diode (LD) or other lasers. The crystal Yb(Lu<x>Gd<1-x>)3Ga5O12 is prepared by adopting the Czochralski method. Yb:LGGG crystal is obtained by mixing part Lu3+ into the dodecahedron cases of the Yb:GGG crystal. The crystal has the advantages of stable growth interface and high crystalline quality, and can be applied to the production of laser crystal, which can generate continuous laser output, Q-switch laser and mode-locked laser.

Description

technical field [0001] The invention relates to a new type of laser crystal and its growth and application, in particular to a laser crystal doped with ytterbium, lutetium, gadolinium and gallium garnet (Yb:LGGG), a growth method and application, and belongs to the technical field of crystals and devices. technical background [0002] Laser is one of the greatest inventions of the 20th century. It has excellent characteristics such as good coherence, good directionality, and high brightness. Since the birth of the first ruby ​​laser in 1960, laser technology has shown a rapid development trend in miniaturization, high power, narrow pulse, etc., and has been widely used in industry, military, medical, communication and other fields, creating a new situation in the field of optics , to promote the development of optoelectronic technology. [0003] At present, there are many kinds of lasers, which can be divided into gas, solid, dye and semiconductor lasers according to the cl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B15/00H01S3/16
Inventor 陶绪堂付秀伟贾志泰董春明
Owner SHANDONG UNIV
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