Production device for silicon oxide film and production method thereof

Abstract

The invention provides a production method of silicon oxide, and the production method comprises the following steps of: warming a heating device, setting a to-be-filmed substrate, and introducing nitrogen to remove the impurity gas in the reaction chamber; bringing the reaction precursor ethyl silicate into the reaction chamber by the nitrogen carrier gas; conveying the oxygen in an oxygen source to an ozone generator, conveying the generated ozone into the reaction chamber; performing reactive deposition on the surface of the to-be-filmed substrate by the precursor ethyl silicate and the ozone in the reaction chamber, so as to prepare the silicon oxide film. In the production method of the silicon oxide film provided by the invention, a thermal reaction mode is used, plasma damage of the to-be-filmed substrate is avoided, and the production device of the silicon oxide film is simple, the technological process is easy to control, and the deposition temperature of the silicon oxide film is lowered effectively. Moreover, the silicon oxide film is deposited on the top layer of the Low-E glass, the properties, such as acid and alkali corrosion resistance, oxidation resistance, heat and humidity resistance and high temperature resistance, of the functional glass are improved greatly.

Description

Technical field [0001] The invention relates to the technical field of thin film deposition, in particular to a production equipment and a production method of silicon dioxide thin films. Background technique [0002] Material wear, corrosion and environmental damage are one of the basic problems facing modern industry. The effective way to solve this problem is to strengthen the surface of the material through various surface treatment technologies. Surface treatment is the use of various technologies to change the chemical composition, structure, microstructure and stress state of the material surface to improve the material's ability to resist environmental damage. These surface technologies can be divided into atomic deposition, particle deposition, bulk deposition and surface modification. [0003] Chemical vapor deposition (CVD) belongs to the category of atomic deposition. The application of CVD technology in the field of surface modification of materials has developed rap...

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Problems solved by technology

[0006] The present invention aims to provide a two-way method for the defects in the prior art that the traditional CVD method for depositing silicon dioxide thin films is still limited to the field of semiconductor integrated circuit production, and the CVD equipment is complex, the control process is affected by various factors, and the process is not stable. Silicon oxide film production equipment

[0007] Another purpose of the present invention is to provide a solution for the defects in the prior art that the traditional CVD method for depositing silicon dioxide thin films is still limited to the field of semiconductor integrated circuit production, and there are many factors affecting the control process of CVD, and the process is still unstable. A kind of production method of silicon dioxide thin film

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