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Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI)

A technology of field effect transistors and graphene, which is applied in the direction of transistors, single semiconductor device testing, semiconductor/solid-state device manufacturing, etc., can solve problems such as complex processing technology and stability of flexible substrates, and achieve convenient surface modification and good biological phase. Capacitive and stable performance

Active Publication Date: 2013-07-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the stability problem and the complex processing technology problem of the existing graphene field effect tube flexible substrate, the present invention intends to provide a graphene field effect tube preparation method and detection method based on the PI flexible substrate, which is an implantable device. The development of the new ideas

Method used

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  • Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI)
  • Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI)
  • Preparing method and detecting method of liquid grid type grapheme field-effect tube based on polyimide (PI)

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Manufacturing method of graphene field effect tube

[0024] Device fabrication process such as figure 1 As shown, the details are as follows:

[0025] 1. Clean the silicon wafer with Phiranha solution, rinse it with deionized water, and perform oxygen plasma etching for 5 minutes;

[0026] 2. Deposit 10 nanometers of titanium and 1 microns of aluminum on the surface of the silicon wafer; ( figure 1 a)

[0027] 3. Spin-coat Durimide7510 photoresist on the surface of the aluminum layer, and expose according to the mask; ( figure 1 b)

[0028] 4. Develop and cure PI at 350°C to obtain the device substrate;

[0029] 5. Sputter titanium / gold electrodes on the substrate using the "lift-off" process; ( figure 1 c)

[0030] 6. Copper foil on graphene / PMMA film with FeCl 3 The solution was corroded, and after cleaning with deionized water, the film was transferred to the substrate on which the electrode site had been made, dried at 80°C, and polymethyl methacrylate was d...

Embodiment 2

[0035] Graphene field effect tube performance testing method

[0036] Transfer characteristic curves such as image 3 As shown, the Dirac point appears when the gate voltage is 270mV, and the output characteristic curve is as follows Figure 4 As shown, the test method is as follows:

[0037] 1. Fix the released device on the glass slide, and connect the electrode leads to the ammeter with conductive silver glue;

[0038] 2. Use PDMS to stick a 1 cm high glass ring on the surface of the device to form a cavity, and heat to cure the PDMS;

[0039] 3. Add 1 ml of PBS buffer in the chamber, put the AgCl / Ag reference electrode connected to the voltage source into the chamber;

[0040] 4. Apply a voltage of 100 millivolts between the drain and the source of the FET, and control the magnitude of the drain-source current by controlling the potential of the AgCl / Ag reference electrode to obtain the transfer characteristic curve;

[0041]5. Fix the potential of the AgCl / Ag referenc...

Embodiment 3

[0043] Cell culture and observation on field effect tube

[0044] The culture medium was MEM medium supplemented with 10% fetal bovine serum, 100 μg / ml streptomycin, and 0.11 g / L sodium pyruvate. Routinely cultured SK-N-SH cells were digested with digestive solution (0.25% trypsin, 0.02% EDTA solution), centrifuged, blown, and 4×10 5 cells / mm 3 The density is inoculated on the surface of the field effect tube. The temperature control target was set at 37±0.5°C. After 7 days in culture, cell viability was determined by staining with calcein and with calcein and ethidium homodimer-1. When Calcein stains live cells, the fluorescent signal near the wavelength of 517nm can be detected; when ethidium homodimer-1 stains the dead cells, the fluorescent signal near the wavelength of 617nm can be detected. The fluorescent signal of calcein can be detected by fluorescence microscope (eg Figure 5 shown), no fluorescence signal of ethidium homodimer-1 could be detected, indicating th...

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Abstract

The invention relates to a preparing method and a detecting method of a liquid grid type grapheme field-effect tube based on polyimide (PI). The methods are characterized in that an aluminum layer is deposited on a silicon substrate to be used as a sacrificial layer, PI photoresist is coated on the aluminum layer in a spin mode to be used as a substrate of a flexible field-effect tube, a commercialized grapheme / polymethyl methacrylate thin film is transferred to a titanium / gold electrode which is deposited on the PI substrate in advance to form good ohmic contact, AZ 4620 photoresist is used as a mask layer for grapheme patterning, grapheme is etched through oxygen plasma, and an insulating layer is manufactured on the surface of the patterned grapheme through the PI photoresist to form a liquid grid type structure. The field-effect tube is in the liquid grid type structure, so that machining steps can be reduced, further surface decoration on the surface of the grapheme is convenient, and accordingly specific detection on various biological signals is achieved.

Description

technical field [0001] The present invention relates to a preparation method and a detection method of a "liquid gate type" graphene field effect tube, in particular to a preparation method and a detection method of a field effect tube using a polyimide (PI) material to obtain a flexible device. The device has good biocompatibility and is expected to be used as an implantable device in medical testing. Background technique [0002] Biosensors based on the "liquid grid" field effect transistor structure have extremely high sensitivity and have been widely used in the field of trace biological signal detection, but there are still obvious deficiencies. Current FET sensors based on rigid substrates are expensive and not suitable for implantable devices in medical testing. In contrast, field effect transistors based on flexible materials can be applied to more detection environments, and the selection of suitable polymer materials can greatly reduce the doping effect of substra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786G01R31/26G01N21/64
Inventor 吴蕾成霁金庆辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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