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Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method

A technology of ferroelectric thin film and gel method, which is applied in the field of functional materials, can solve the problems of large leakage conductance of pure phase BiFeO, inability to obtain saturated hysteresis loop, and limitation of practical application, so that the doping amount can be precisely controlled, Increased structural distortion and improved ferroelectricity

Active Publication Date: 2013-05-29
盐城青墩津邦水务有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, pure phase BiFeO 3 There is a problem of large leakage conductance, which makes it impossible to obtain a saturated hysteresis loop and high remanent polarization, which greatly limits its practical application

Method used

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  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method
  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method
  • Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:1.00:0.00, and after magnetic stirring for 3 hours, stable BiFeO with a metal ion concentration of 0.003 mol / L was obtained. 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0027] Step 2: Spin-coat BiFeO on FTO / glass substrate by spin-coating method 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline BiFeO 3 film.

[0028] Step 3: In Crystalline BiFeO 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ℃ for 20min for electrode annealing treatment.

[0029] Determination of BiFeO by XRD 3 Phase composition and structure of thin films, determined by FE-SEM for BiFeO 3 Microscopic ...

Embodiment 2

[0031] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:0.99:0.01, and after magnetic stirring for 3 hours, a stable BiFe with a metal ion concentration of 0.3mol / L was obtained. 0.99 Cr 0.01 o 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0032] Step 2: Spin-coat BiFe on FTO / glass substrate by spin-coating method 0.99 Cr 0.01 o 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline Cr-doped BiFe 0.99 Cr 0.01 o 3 film.

[0033] Step 3: BiFe in Crystalline State 0.99 Cr 0.01 o 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ℃ for 20min for electrode annealing treatment.

[0034] Determination of BiFe by XRD 0.99 Cr 0.01 o ...

Embodiment 3

[0036] Step 1: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, and Cr(NO 3 ) 3 9H 2 O was dissolved in a mixture of ethylene glycol methyl ether, acetic anhydride and ethanolamine at a molar ratio of 1.05:0.98:0.02, and after magnetic stirring for 3 hours, a stable BiFe with a metal ion concentration of 0.1mol / L was obtained. 0.98 Cr 0.02 o 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether, acetic anhydride and ethanolamine is 14:5:1.

[0037] Step 2: Spin-coat BiFe on FTO / glass substrate by spin-coating method 0.98 Cr 0.02 o 3 Thin films were prepared from the precursor solution, and the layer-by-layer annealing process was used to obtain crystalline Cr-doped BiFe 0.98 Cr 0.02 o 3 film.

[0038] Step 3: BiFe in Crystalline State 0.98 Cr 0.02 o 3 Preparation of 0.502mm thin film surface by ion sputtering 2 Au electrode, and then 300 ° C for 20 min for electrode annealing treatment.

[0039] see figure 1 As shown, the BiFe was determi...

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Abstract

The invention provides a method for preparing a BiFe1-xCrxO3 ferroelectric film by using a sol-gel method. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate and chromic nitrate according to a molar ratio of 1.05: (1-x): x into a mixed solution containing ethylene glycol monomethyl ether, acetic oxide and cholamine, and magnetically stirring to obtain a stable BiFe1-xCrxO3 precursor with the metal ion concentration of 0.003-0.3mol / L, wherein x is equal to 0.00-0.03, and the volume ratio of the ethylene glycol monomethyl ether to the acetic oxide to the cholamine is 14: 5: 1. A film is prepared by spin-coating the BiFe1-xCrxO3 precursor on an FTO (Fluorine-doped Tin Oxide) / glass substrate by using a spin-coating method, and a crystalline BiFe1-xCrxO3 film is obtained by adopting a layer-by-layer annealing process. The method disclosed by the invention has simple requirements on equipment, and experimental conditions are easy to achieve; the prepared film is better in uniformity, and the doping amount is easy to control; and the ferroelectric property of the BiFeO3 film is improved through B-bit Cr doping.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of BiFe on the surface of a functionalized FTO / glass substrate 1-x Cr x o 3 thin film method. Background technique [0002] BiFeO 3 It has ferroelectricity and antiferromagnetism, accompanied by weak ferromagnetism, which has greatly aroused people's research interest. BiFeO 3 With a twisted perovskite structure, it has both ferroelectric order (TC=810°C) and G-type antiferromagnetic order (TN=380°C) at room temperature, and is one of the few single-phase multiferroic materials. BiFeO 3 It has a wide range of applications in information storage, information storage, image display, etc. However, pure phase BiFeO 3 There is a problem of large leakage conductance, which makes it impossible to obtain a saturated hysteresis loop and high remanent polarization, which greatly limits its practical application. Contents of the invention [0003] The object of th...

Claims

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Application Information

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IPC IPC(8): C04B35/42C04B35/624
Inventor 谈国强刘文龙
Owner 盐城青墩津邦水务有限公司
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