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Method for preparing Gd and Co codoped high-remanent-polarization BiFeO3 thin film by sol-gel method

A sol-gel method, a technology of polarization strength, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problems of small coercive field, iron valence fluctuation, low resistivity, etc. Good performance, uniformity, and the effect of improving ferroelectric properties

Active Publication Date: 2013-05-01
盐城市枯枝牡丹旅游开发投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] BiFeO 3 The thin film is really applied to microelectronic devices, it must have strong ferroelectricity, ferromagnetism and magnetoelectric coupling effect at the same time, the coercive field is small enough, pure BiFeO 3 Thin films clearly do not meet the requirements
To do this it is necessary for the BiFeO 3 The thin film is modified, although a lot of research work has reduced the BiFeO 3 The leakage current of the base film improves its electrical performance, but there are still some problems to be solved
BiFeO 3 The biggest problem with thin films is low resistivity, fluctuations in the valence state of iron, and the formation of oxygen vacancies

Method used

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  • Method for preparing Gd and Co codoped high-remanent-polarization BiFeO3 thin film by sol-gel method
  • Method for preparing Gd and Co codoped high-remanent-polarization BiFeO3 thin film by sol-gel method

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Experimental program
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Effect test

Embodiment 1

[0020] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Gd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 1:0.97:0.05:0.03, then heated and stirred in a water bath at 80°C for 1 h, and then added with acetic anhydride and stirred for 1 h to obtain stable BiFeO 3 Precursor; Among them, BiFeO3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0021] 2) Let the precursor solution stand for 24 hours, and spin-coat BiFeO on the FTO / glass substrate by spin-coating method 3 Precursor solution to prepare thin film, then quickly anneal the thin film at 550°C for 8min, then cool down to room temperature, and repeat the spin-coating-fast process in step 2) until the crystalline BiFeO with the desired thickness is prepared 3 thin film, the BiFeO 3 The composition of the film is Bi 0.95 Gd 0.05 Fe 0.97 co 003 o 3 ...

Embodiment 2

[0023] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Gd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 0.98:0.97:0.07:0.03, then heated and stirred in a water bath at 80°C for 1 h, and then added with acetic anhydride and stirred for 1 h to obtain stable BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0024] 2) Let the precursor solution stand for 24 hours, and spin-coat BiFeO on the FTO / glass substrate by spin-coating method 3 Precursor solution to prepare thin film, then quickly anneal the thin film at 550°C for 8min, then cool down to room temperature, and repeat the spin-coating-fast process in step 2) until the crystalline BiFeO with the desired thickness is prepared 3 thin film, the BiFeO 3 The composition of the film is Bi 0.93 Gd 0.07 Fe 0.97 co 0.03...

Embodiment 3

[0026] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Gd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 0.95:0.97:0.10:0.03, then heated and stirred in a water bath at 80°C for 1 h, and then added with acetic anhydride and stirred for 1 h to obtain stable BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0027] 2) Let the precursor solution stand for 24 hours, and spin-coat BiFeO on the FTO / glass substrate by spin-coating method 3 Precursor solution to prepare thin film, then quickly anneal the thin film at 550°C for 8min, then cool down to room temperature, and repeat the spin-coating-fast process in step 2) until the crystalline BiFeO with the desired thickness is prepared 3 thin film, the BiFeO 3 The composition of the film is Bi 0.90 Gd 0.10 Fe 0.97 co 0.03...

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Abstract

The invention provides a method for preparing a Gd and Co codoped high-remanent-polarization BiFeO3 thin film by a sol-gel method. The method comprises the steps that Bi(NO3)3*5H2O, Fe(NO3)3*9H2O, Gd(NO3)3*6H2O and Co(NO3)2*6H2O are dissolved in ethylene glycol monomethyl ether, and then heated and stirred in an 80 DEG C water bath for 1h; acetic anhydride is added and stirred for 1h; a BiFeO3 precursor solution is obtained and stands for 24h; an FTO (Fluorinedoped Tin Oxide) / glass substrate is subjected to spin coating with the BiFeO3 precursor solution for preparing a thin film; the thin film is subjected to rapid annealing at 550 DEG C, and then cooled to a room temperature; and spin coating and rapid annealing processes are repeated till the BiFeO3 thin film with the required thickness is prepared. The adopted sol-gel method does not require expensive equipment, and is suitable for preparing the thin film on a large surface and a surface with an irregular shape; in addition, chemical constituents are precise and controllable; the ferroelectric property of the prepared BiFeO3 thin film is improved under coaction of Gd and Co.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a sol-gel method to prepare Gd and Co co-doped BiFeO with high remnant polarization 3 thin film method. Background technique [0002] Currently, BiFeO 3 As the representative multiferroic compound system, a worldwide research boom of single-phase multiferroic magnetoelectric materials has been formed. With the development of microelectronics technology, optoelectronics and sensor technologies, the requirements for material properties are getting higher and higher. Ferroelectric thin films have become widely used in microelectronics and optoelectronics due to their good ferroelectric, piezoelectric and dielectric properties. important functional materials in the fields of integrated optics and microelectromechanical systems. Bi series ABO 3 type ferroelectric thin film materials, such as BiFeO 3 Thin films have attracted the attention of scientists in recent years. Due to ...

Claims

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Application Information

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IPC IPC(8): C01G49/00
Inventor 谈国强薛旭任慧君刘文龙董国华耶维
Owner 盐城市枯枝牡丹旅游开发投资有限公司
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