Preparation method of carbon-doped magnesium diboride superconducting tape
A superconducting tape, magnesium diboride technology, applied in the manufacture/processing of superconductor devices, boron/borides, metal borides, etc., can solve the problems of low density, high heat treatment temperature, difficult use and transportation, etc. Achieve the effect of increased critical current density, low heat treatment temperature, and good grain connectivity
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Embodiment 1
[0030] a. Making buffer layer: Coating 20nm thick Al on the Fe base band with a thickness of 0.2mm and a width of 10mm by chemical sol-gel method 2 o 3 as a buffer layer;
[0031] b. Coating precursor: Malic acid-doped Mg(BH 4 ) 2 Colloid, and adopt the method of pulling, this colloid is coated on the buffer layer that a step makes; Wherein malic acid and Mg(BH 4 ) 2 The mass ratio is 0.036:1;
[0032] c. Heat treatment: After step b is completed, put it into a heat treatment furnace, raise the temperature to 300°C under the protective atmosphere of argon atmosphere, keep it warm for 3 hours, and then cool it with the furnace, and then the "Fe baseband-Al 2 o 3 Buffer layer-Mg(B0.99 C 0.01 ) 2 Combination composed of superconducting layer;
[0033] d. Covering protective layer: Electron beam evaporation deposits a 2μm thick Ag layer on the combined body after step c heat treatment as a stabilizer and protective layer, and finally obtains C-doped MgB 2 superconducting...
Embodiment 2
[0036] a, make buffer layer: adopt the method for chemical solution to be on the stainless steel base belt that thickness is 0.1mm, width is 10mm, make one deck of 20nm thick MgO thin film as buffer layer;
[0037] b. Coating precursor: On the MgO buffer layer made in step a, evenly coat Mg(BH 4 ) 2 Precursors, among which, malic acid and Mg(BH 4 ) 2 The mass ratio is 0.108:1;
[0038] c. Heat treatment: After step b is completed, it is put into a heat treatment furnace. Under the protective atmosphere of argon atmosphere, the temperature is raised to 500°C, and it is kept for 1 hour and then cooled with the furnace, and the "stainless steel substrate-Al 2 o 3 Buffer layer-Mg(B 0.97 C 0.03 ) 2 Combination composed of superconducting layer;
[0039] d. Covering protective layer: Electron beam evaporation deposits a 5 μm thick Ag layer on the combined body after step c heat treatment as a stabilizer and protective layer, thus obtaining C-doped MgB 2 superconducting tape...
Embodiment 3
[0042] a. Making a buffer layer: using a chemical solution method to make a 20nm thick SiC thin film on a CuZr alloy substrate with a thickness of 0.3mm and a width of 10mm as a buffer layer;
[0043] b. Coating precursor: On the SiC buffer layer made in step a, evenly coat Mg(BH 4 ) 2 Precursors, among which, malic acid and Mg(BH 4 ) 2 The mass ratio is 0.18:1;
[0044] c. Heat treatment: After step b is completed, put it into a heat treatment furnace, raise the temperature to 400°C under the protective atmosphere of argon atmosphere, keep it warm for 2 hours, and then cool it with the furnace, and the "CuZr baseband-SiC buffer layer" is obtained. -Mg(B 0.95 C 0.05 ) 2 Combination composed of superconducting layer;
[0045] d. Covering protective layer: Electron beam evaporation deposits a 2 μm thick Ag layer on the combined body after step c heat treatment as a stabilizer and protective layer, thus obtaining C-doped MgB 2 superconducting tape;
[0046] The strip of ...
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