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Method for preparing manganese-stabilized zirconia film

A technology for stabilizing zirconia and thin films, which is applied in the field of preparation of manganese-stabilized zirconia thin films, can solve problems such as the easy occurrence of second-phase oxides, eliminate the formation of amorphous layers and second-phase oxides, and achieve rapid preparation Effect

Inactive Publication Date: 2009-11-18
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method can overcome the problems of mixed monoclinic phase and high-temperature phase in the preparation of zirconium oxide films in the prior art, and the second-phase oxides are prone to appear at the substrate / film interface, and the preparation process is simple and repeatable. The manganese-stabilized zirconia thin film prepared by the method has an atomically sharp interface with the single crystal substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] ZrO 2 powder and MnO 2 Powder is used as raw material, according to the Zr:Mn molar ratio of 3:1, weigh, mix, and grind for 2 hours, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, and weigh 5g in one portion , use a hard steel mold on the tablet press, and use a pressure of 10MPa to press into a disc-shaped sample with a diameter of 20mm and a thickness of 2mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace. In an argon atmosphere, it is sintered at 1400 ° C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr 0.75 mn 0.25 o 2 Stabilized zirconia blocks, which are ground to produce targets. Then, manganese-stabilized zirconia thin films were prepared by pulsed laser deposition technology. The laser used in the experiment was a COMPex205 KrF excimer laser produced by Lambda Phy...

Embodiment 2

[0018] ZrO 2 powder and MnO 2 Powder is used as raw material, according to the Zr:Mn molar ratio of 3:1, weigh, mix, and grind for 2 hours, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, and weigh 5g in one portion , use a hard steel mold on the tablet press, and use a pressure of 10MPa to press into a disc-shaped sample with a diameter of 20mm and a thickness of 2mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace. In an argon atmosphere, it is sintered at 1400 ° C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr 0.75 mn 0.25 o 2 Stabilized zirconia blocks, which are ground to produce targets. Then, manganese-stabilized zirconia thin films were prepared by pulsed laser deposition technology. The laser used in the experiment was a COMPex205 KrF excimer laser produced by Lambda Phy...

Embodiment 3

[0020] ZrO 2 powder and MnO 2 Powder is used as raw material, according to the Zr:Mn molar ratio of 3:1, weigh, mix, and grind for 2 hours, take it out after constant temperature treatment at 1400°C for 12-24 hours, then carefully grind for 2 hours, mix well, and weigh 5g in one portion , use a hard steel mold on the tablet press, and use a pressure of 10MPa to press into a disc-shaped sample with a diameter of 20mm and a thickness of 2mm. After the sample is placed in a corundum crucible, it is placed in a silicon carbon tube heating element tubular high-temperature furnace. In an argon atmosphere, it is sintered at 1400 ° C for 12-24 hours and then cooled to room temperature with the furnace to obtain Zr 0.75 mn 0.25 o 2 Stabilized zirconia blocks, which are ground to produce targets. Then, manganese-stabilized zirconia thin films were prepared by pulsed laser deposition technology. The laser used in the experiment was a COMPex205 KrF excimer laser produced by Lambda Phy...

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Abstract

The invention discloses a method for preparing a manganese-stabilized zirconia film, which comprises the following steps: using metal oxide ZrO2 powder and MnO2 powder as raw materials, weighing the raw materials according to a molar ratio of positive ions in Zr0.75Mn0.25O2 of 3:1, and mixing, grinding and sintering the raw materials; and after he raw materials are grinded and pressed again, repeatedly sintering the raw materials, again, polishing a sintered sample into a target material, corroding a target body by pulse laser projected onto the surface of the target material at certain substrate temperature, argon partial pressure and target-substrate distance, and depositing the doped zirconia onto a yttrium-stabilized zirconia single crystal substrate after a plume is formed to obtain the manganese-stabilized zirconia film. The method has the advantages that: the process is simple; the prepared manganese-stabilized zirconia film has good c-axis texture and smooth and compact surface; and an atomic-scale sharp interface is formed between the manganese-stabilized zirconia film and the single crystal substrate.

Description

technical field [0001] The invention relates to a method for preparing a manganese-stabilized zirconia film, in particular to a manganese-stabilized zirconia Zr oxide film with wide application potential in the fields of gate dielectrics, magnetic films, and high-temperature superconducting coating conductors in oxide semiconductor devices. 0.75 mn 0.25 o 2 The method of film preparation. Background technique [0002] Zirconia (ZrO 2 ) materials have broad application potential in oxygen detectors, high-temperature fuel cells, catalytic technology, and photoconductive devices. Zirconia (ZrO 2 ) is also a high-temperature structural ceramic material with a melting point as high as 2973K. In the atmospheric environment, there are three allotropes of zirconia, namely monoclinic (m-ZrO 2 ), tetragonal system (t-ZrO 2 ) and cubic system (c-ZrO 2 ). Pure ZrO 2 During the cooling process after sintering, a martensitic transformation from tetragonal phase to monoclinic pha...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/48
Inventor 卢亚锋白利锋冯建情李成山闫果
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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