Method for preparing nanocrystalline/amorphous silicon two-phase film solar battery

Abstract

The invention discloses a preparation method of a nano-crystalline / amorphous silicon diphase thin film solar cell. The method comprises the following steps: cleaning glass surface; depositing a SiN thin film by PECVD; depositing a layer of transparent conducting ITO film on the front face of a cell, preparing a hydrogenated nano-crystalline / amorphous silicon diphase thin film on an ITO / glass substrate; forming a P-type layer by B ion implantation with the energy of 200-250keV and the dosage of 1*10<17>-4*10<17> / cm<2>; and forming a N-type layer by P ion implantation with the energy of 15-30keV and the dosage of 2*10<17>-5*10<17> / cm<2>. The preparation method avoids the use of poisonous gases phosphorane and borane, provides high doping activation rates of B and P, lowers the impurity trapping center on the p layer and the n layer, improves the collection efficiency of electrons and holes, reduces contact resistance and increases short circuit current.

Description

Technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a nanocrystalline / amorphous silicon two-phase nano-silicon thin film solar cell using a combination of sub-injection technology, which is used in the fields of photovoltaic technology and semiconductor technology. Background technique [0002] Currently in the solar cell manufacturing industry, crystalline silicon and polycrystalline silicon solar cells account for more than 80% of the market. Due to the shortage of silicon materials and the high price, the manufacturing cost of bulk silicon solar cells is always at a high level. In addition, the high energy consumption in the production process of bulk silicon causes serious pollution to the environment. Therefore, the development of thin-film solar cells is expected Must do. At present, the production of silicon-based thin film solar cells is mainly based on amorphous silicon thin film materials. Amorphou...

AI Technical Summary

Problems solved by technology

Due to the low doping efficiency of B and P in the PECVD (plasma enhanced vapor deposition method) deposition process, the pH in the general preparation process 3 / SiH 4 , BH 3 / SiH 4 The ratio is as high as 1%, so the impurity content in the film is high, resulting in low mobility of carriers, low collection efficiency, and low efficiency of solar cells