Insulated gate type source-leakage composite field plate transistor with high electron mobility and preparing method thereof

Abstract

The invention discloses an insulated gate type source-drain composite field plate transistor with high electron mobility and a fabrication method thereof. The transistor comprises a substrate, a transition layer, a barrier layer, a source electrode, a drain electrode, an insulated gate electrode, a passivation layer, a source field plate, a drain field plate and a protection layer from bottom to top,; the source field plate is electrically connected with the source electrode, the drain field plate is electrically connected with the drain electrode, wherein, an insulation medium layer is deposited on the upper part of the source electrode, the upper part of the drain electrode as well as the upper part of the barrier layer between the source electrode and the drain electrode; and n floating field plates are deposited on the passivation layer arranged between the source field plate and the drain field plate. All the floating field plates have the same size and are mutually independent in floating state, and the floating field plates are equidistantly distributed between the source field plate and the drain field plate. The n floating plates, the source field plate and the drain plate are completed on the passivation layer by one-time process. The transistor has the advantages of simple process, strong reliability and high breakdown voltage, and the transistor and the fabrication method can be used for fabricating high power devices based on a wide band gap compound semiconductor material heterojunction.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular an insulated gate type source-drain compound field plate high electron mobility transistor based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a high-power system. technical background [0002] In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important parameters, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. In order to meet the needs of high breakdown voltage and ...

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Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning. To make the insulating dielectric material deposited under the field plates of each layer have an appropriate thickness, cumbersome process debugging must be carried out, thus greatly increasing the difficulty of device manufacturing and reducing the yield of devices

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