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Silicon slice glazed surface scuffing control method

A control method and technology for polishing silicon wafers, which are used in surface polishing machine tools, workpiece feed motion control, grinding/polishing equipment, etc., which can solve the problem of decreased removal rate of polished silicon wafers, higher abrasive performance requirements, and increased production. cost and other issues, to achieve the effect of reducing scratches, improving surface quality and increasing production costs

Inactive Publication Date: 2009-02-18
JIANGSU HAIXUN IND GROUP SHARE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in the patent 03155318.4, by controlling the abrasive particle size, the polishing scratches are smaller than the above two polishing liquids, but the removal rate of the polished silicon wafer is reduced due to the change of the abrasive particle size
In the patent 200510055710.5, a polishing method using spherical silica abrasives is proposed. Although the effect of less polishing scratches is achieved, this method has higher requirements on abrasive performance and increases production costs. It is not suitable for large-scale production. easy to accomplish

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Lanxin 815B double-sided polishing machine is selected, and the material of the polishing disc is spherical graphite cast iron.

[0026] Prepare 1 kg of silicon wafer polishing solution.

[0027] Take by weighing 10% silicon dioxide abrasive of preparing polishing liquid weight respectively, the particle diameter of this silicon dioxide is 70 nanometers, 12% sodium hydroxide, 0.5% lauroyl monoethanolamine, 3.5% phosphoric acid ester, 1% glycerin, 2% hexahydroxypropylpropylenediamine, and the balance deionized water. At room temperature, the above-mentioned silicon dioxide abrasive, sodium hydroxide, lauroyl monoethanolamine, phosphoric acid ester, glycerin and hexahydroxypropylpropylenediamine were successively added into deionized water, stirred evenly, and set aside.

[0028] When polishing, paste the silicon wafer to be polished on the polishing disc of the polishing machine, fix the polishing disc with the silicon wafer on the polishing head of the machine, adjust ...

Embodiment 2

[0032] Lanxin 815B double-sided polishing machine is selected, and the material of the polishing disc is spherical graphite cast iron.

[0033] Prepare 2 kg of silicon wafer polishing solution.

[0034] Take by weighing 12% Al2O3 abrasive material of preparing polishing fluid weight respectively, the particle diameter of this Al2O3 is 200 nanometers, 10% Tetramethylammonium Hydroxide, 0.3% Polymerization degree is the octylphenol of 25 Polyoxyethylene ether, 5% polyoxyethylene ether (JFC), 0.7% glycerin, 1.5% tetrahydroxyethylethylenediamine, and the balance is deionized water.

[0035] At room temperature, add the above-mentioned aluminum oxide abrasive, tetramethylammonium hydroxide, octylphenol polyoxyethylene ether with a polymerization degree of 25, polyoxyethylene ether, glycerin and tetrahydroxyethyl ether in deionized water in sequence. Ethylenediamine, stirred evenly and set aside.

[0036] When polishing, paste the silicon wafer to be polished on the polishing disk...

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Abstract

The invention provides a method for controlling the scuffing of the polishing surface of a silicon chip. The method comprises the following steps: the silicon chips are pasted on polishing discs of a polishing machine; the polishing discs are fixed on a polishing head of the polishing machine; the pressure of the polishing machine and the rotational speeds of the upper polishing disc and the lower polishing disc are controlled; and polishing solution is injected to the polishing discs and between the silicon chips. The method has the improved aspects: the polishing solution comprises a grinding material, a penetrating agent, a lubricant, a PH regulator, a surfactant, a chelon and deionized water; the pressure of the polishing machine is controlled below 50 kilopascal; the rotational speed of the upper polishing disc is controlled below 60 revolutions per minute; and the rotational speed of the lower polishing disc is controlled below 60 revolutions per minute. The method can effectively reduce the scuffing of the surface of the polishing silicon chip, simultaneously ensure high removing velocity of polishing the silicon chip, has low production cost and is suitable for the requirement of scale production.

Description

technical field [0001] The invention relates to a silicon chip processing method, in particular to a method for controlling surface scratches on the polished silicon chip which can process and polish single crystal silicon chips for integrated circuit substrates and can reduce the degree of surface scratches. Background technique [0002] Silicon is a hard and brittle material with a diamond crystal structure and covalent bonds between atoms. It is a good semiconductor material. At present, more than 90% of integrated circuit semiconductor chips are silicon wafers (silicon wafers). In order to print integrated circuits on silicon wafers and combine them closely with other components, the surface of silicon wafers must be flat, especially as the integration level of integrated circuits continues to increase, the requirements for the flatness and roughness of silicon wafer surface are higher. strict requirements. [0003] Polishing is the second mechanical processing on the s...

Claims

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Application Information

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IPC IPC(8): B24B29/00H01L21/304C09G1/02C09G1/04
CPCC09G1/02B24B49/16B24B37/08B24B49/00H01L21/30625
Inventor 仲跻和
Owner JIANGSU HAIXUN IND GROUP SHARE
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