Silicon slice glazed surface scuffing control method
A control method and technology for polishing silicon wafers, which are used in surface polishing machine tools, workpiece feed motion control, grinding/polishing equipment, etc., which can solve the problem of decreased removal rate of polished silicon wafers, higher abrasive performance requirements, and increased production. cost and other issues, to achieve the effect of reducing scratches, improving surface quality and increasing production costs
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Embodiment 1
[0025] Lanxin 815B double-sided polishing machine is selected, and the material of the polishing disc is spherical graphite cast iron.
[0026] Prepare 1 kg of silicon wafer polishing solution.
[0027] Take by weighing 10% silicon dioxide abrasive of preparing polishing liquid weight respectively, the particle diameter of this silicon dioxide is 70 nanometers, 12% sodium hydroxide, 0.5% lauroyl monoethanolamine, 3.5% phosphoric acid ester, 1% glycerin, 2% hexahydroxypropylpropylenediamine, and the balance deionized water. At room temperature, the above-mentioned silicon dioxide abrasive, sodium hydroxide, lauroyl monoethanolamine, phosphoric acid ester, glycerin and hexahydroxypropylpropylenediamine were successively added into deionized water, stirred evenly, and set aside.
[0028] When polishing, paste the silicon wafer to be polished on the polishing disc of the polishing machine, fix the polishing disc with the silicon wafer on the polishing head of the machine, adjust ...
Embodiment 2
[0032] Lanxin 815B double-sided polishing machine is selected, and the material of the polishing disc is spherical graphite cast iron.
[0033] Prepare 2 kg of silicon wafer polishing solution.
[0034] Take by weighing 12% Al2O3 abrasive material of preparing polishing fluid weight respectively, the particle diameter of this Al2O3 is 200 nanometers, 10% Tetramethylammonium Hydroxide, 0.3% Polymerization degree is the octylphenol of 25 Polyoxyethylene ether, 5% polyoxyethylene ether (JFC), 0.7% glycerin, 1.5% tetrahydroxyethylethylenediamine, and the balance is deionized water.
[0035] At room temperature, add the above-mentioned aluminum oxide abrasive, tetramethylammonium hydroxide, octylphenol polyoxyethylene ether with a polymerization degree of 25, polyoxyethylene ether, glycerin and tetrahydroxyethyl ether in deionized water in sequence. Ethylenediamine, stirred evenly and set aside.
[0036] When polishing, paste the silicon wafer to be polished on the polishing disk...
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