Mask patterns including gel layers for semiconductor device fabrication and methods of forming the same

Abstract

Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Description

RELATED APPLICATION DATA [0001] This application claims priority from Korean Patent Application No. 10-2004-0076350, filed Sep. 23, 2004, the disclosure of which is incorporated herein by reference in its entirety. FIELD OF THE INVENTION [0002] The present invention relates to mask patterns. More particularly, the present invention relates to mask patterns for fabrication of a semiconductor device, methods of forming the same and methods of fabricating a semiconductor device using the mask patterns as etching masks. BACKGROUND OF THE INVENTION [0003] In a conventional patterning process for semiconductor device fabrication, after a photoresist pattern is formed on a predetermined film to be etched for pattern formation, for example, a silicon film, a dielectric film, or a conductive film, the predetermined film may be etched by using the photoresist pattern as an etching mask to form a desired pattern. [0004] With the increased integration of semiconductor devices, it is desirable t...

AI Technical Summary

Benefits of technology

[0009] According to some embodiments of the invention, the mask pattern includes a resist pattern, and a gel layer formed on a surface of the resist pattern having a junction comprising hydrogen bonds between a proton donor polymer and a proton acceptor polymer. In some embodiments, the junction of the gel layer includes a plurality of regions capable of undergoing hydrogen bonding and wherein the proton donor polymer and the proton acceptor polymer are hydrogen bonded therebetween, and a defect region wherein the proton donor polymer and the proton acceptor polymer are not hydrogen-bonded therebetween so as to form a region lacking hydrogen bonding between the hydrogen-bonded regions. Embodiments of the present invention further provide mask patterns for semiconductor device fabrication, having a construction suitable for forming a fine pattern at wavelengths above the wavelength limit of conventional lithography.

[0010] Embodiments of the present invention also provide methods of forming a mask pattern for semiconductor device fabrication. In some embodiments, methods of forming a mask pattern include forming a resist pattern on a substrate; and forming on a surface of the resist pattern, a gel layer having a junction formed by hydrogen bonding between a proton donor polymer and a proton acceptor polymer. In some embodiments, forming the gel layer includes preparing a coating composition comprising the proton donor polymer, the proton acceptor polymer, and / or a base; contacting the coating composition with the surface of the resist pattern; and heating the resist pattern to an extent wherein the coating composition is contacted with the surface of the resist pattern to diffuse an acid of the resist pattern into the coating composition. In some embodiments of the present invention, methods of forming a mask pattern for semiconductor device fabrication enable the formation of a fine pattern with a smaller feature size while minimizing the transformation of the sidewall profile of opening or spaces and can ensure a sufficient resistance to dry etching.

Problems solved by technology

Short-wavelength exposure based lithography may present difficulties in that this process can be material-dependent and uneconomical.

In particular, half-tone phase shift mask based lithography may pose limitations on mask formation technology and resolution, and thus, it may be difficult to form contact holes which are less than 150 nm in size.

Images