Novel approach to improve line end shortening

Abstract

A process is described for transferring a photoresist pattern into a substrate. In one embodiment a stack comprised of a top photoresist layer, a middle ARC layer, and a bottom hardmask is formed over a gate electrode layer. A line in the photoresist pattern is anisotropically transferred through the ARC and hardmask. Then an isotropic etch to trim the linewidth by 0 to 50 nm per edge is performed simultaneously on the photoresist, ARC and hardmask. This method minimizes the amount of line end shortening to less than three times the dimension trimmed from one line edge. Since a majority of the photoresist layer is retained, the starting photoresist thickness can be reduced by 1000 Angstroms or more to increase process window. The pattern is then etched through the underlying layer to form a gate electrode. The method can also be used to form STI features in a substrate.

Description

DOMESTIC PRIORITY CLAIM [0001] This application is a continuation of U.S. patent application Ser. No. 10 / 284,963 filed Oct. 31, 2002, and entitled, “Novel Approach to Improve Line End Shortening,” which is hereby incorporated by reference in its entirety.FIELD OF THE INVENTION [0002] The invention relates to a method of fabricating semiconductor structures, and more particularly, to etch transferring a photoresist pattern into a substrate during the formation of an integrated circuit. BACKGROUND OF THE INVENTION [0003] There is a constant demand to improve the performance of a Metal-oxide-semiconductor field effect transistor (MOSFET) which typically involves faster speeds and higher reliability. The speed of the device is usually governed by the width of the gate electrode that is also referred to as the gate length and which is typically one of the smallest dimensions in the device. The critical dimension (CD) or gate length is being reduced in each successive technology generatio...

AI Technical Summary

Benefits of technology

[0015] One objective of the present invention is to provide a means of reducing the linewidth of a photoresist pattern while simultaneously minimizing the line end shortening that occurs during the same trimming etch step.

[0016] A further objective of the present invention is to provide a method of transferring a pattern into a substrate with a reduced amount of line end shortening.

[0017] A still further objective of the present invention is to provide a photoresist trimming process and etch transfer method that retain a majority of the original photoresist film thickness to prevent rough edges on photoresist features from being transferred into a substrate. Alternatively, if photoresist thickness loss is not a primary concern, then the method should enable a thinner photoresist film to be employed that affords a larger process window for the patterning process.

[0019] In the first etch step, the pattern is anisotropically transferred through the ARC and through the hardmask with a plasma etch involving CF4 and Ar. There is a small amount of line end shortening. Next, a lateral trim or isotropic etch is accomplished on the photoresist, ARC, and hardmask simultaneously by using an etch chemistry comprised of CXFY, H2, and optionally O2. The method provides a significant decrease in the amount of line end shortening during the trim process and also retains a larger amount of photoresist thickness compared to conventional methods in which the photoresist is trimmed followed by pattern transfer through a hardmask.

[0021] In a second embodiment, the method of the present invention is applied to the formation of an STI feature. A silicon nitride layer is formed on a substrate and then a hardmask such as silicon oxynitride is deposited on the nitride. Optionally, an organic or inorganic ARC is deposited on the hardmask to improve process latitude in a later photoresist patterning step. A photoresist layer is coated and patterned to form trench openings. First, an anisotropic etch is performed to transfer the pattern through the hardmask. Then the photoresist and hardmask are simultaneously etched isotropically to shrink the linewidth between trench openings with a plasma etch involving CXFY, H2, and optionally O2. The shrinkage in the active area between the trenches is better controlled than in conventional processes that require a photoresist trim prior to etch transfer through the hardmask. Likewise, the ends of the trenches are kept within specification by restricting lateral growth during the etch transfer. The photoresist is stripped and the pattern is etch transferred through the nitride and into the substrate to form shallow trenches which are then filled with a dielectric material such as SiO2.

Problems solved by technology

One shortcoming in state of the art lithography processes is that they are incapable of controllably printing features in photoresist smaller than about 100 nm.

Frequently, L1 is not narrow enough to meet the requirements for a fast transistor speed.

One problem associated with trimming photoresist 18 is that shortening occurs at line ends which can degrade device performance.

As a result, rough edges at the top of line 18b in FIG. 2b can easily generate grooves in the sidewalls of line 18 that are transferred through ARC 17a into hardmask 16a which is detrimental to device performance.

However, in most instances, this correction is not possible because there is not enough room in the mask design to compensate for LES.

Although LES is an important issue in fabricating integrated circuits, there is no prior art that mentions how to minimize the problem through a controllable etch process.

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