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Method for preparing nanometer zinc oxide thin film using high temperature oxidation

A technology of nano-zinc oxide and high-temperature oxidation, which is applied in the direction of solid-state diffusion coating, vacuum evaporation coating, coating, etc., can solve the problems of expensive equipment and application limitations, and achieve simple and easy preparation process, convenient operation, and avoid The effect of forming oxygen vacancies and zinc interstitial

Inactive Publication Date: 2006-02-15
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

However, in zinc oxide films prepared by electron beam evaporation or magnetron sputtering technology, due to the existence of a large number of defects such as oxygen vacancies and zinc gaps, the ratio of oxygen to zinc is often non-stoichiometric.
Although preparation techniques such as MOCVD and MBE can produce high-quality zinc oxide films, their applications are greatly limited due to the high cost of equipment for these two methods.

Method used

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  • Method for preparing nanometer zinc oxide thin film using high temperature oxidation

Examples

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Effect test

example 1

[0018] Using electron beam evaporation technology, the experimental equipment is GDM-450 vacuum coating machine. Put the bulk zinc sulfide with a purity of 99.9% into the crucible, and put the substrate in the fixture after ultrasonic cleaning. Close the vacuum chamber and each pumping valve, and start vacuuming. Heat the substrate to 250°C and make the vacuum degree reach 2×10 -3 Pa. Turn on the high-voltage power supply, pre-melt the bulk zinc sulfide material in the crucible, and stabilize the air pressure in the vacuum chamber at 3.0×10 -3 Pa. Remove the movable baffle and begin to deposit the zinc sulfide film. Adjust the evaporation current and voltage to keep the electron beam current at 20mA. The evaporation process is controlled by the minimax optical control method until the desired film thickness is deposited. Then move the zinc sulfide thin film prepared by electron beam evaporation into a muffle furnace, and oxidize and anneal it in an environment of 700° C....

example 2

[0020] Using electron beam evaporation technology, the experimental equipment is GDM-450 vacuum coating machine. Put the bulk zinc sulfide with a purity of 99.9% into the crucible, and put the substrate in the fixture after ultrasonic cleaning. Close the vacuum chamber and each pumping valve, and start vacuuming. The substrate is heated to 200°C, and the vacuum degree reaches 2×10 -3 Pa. Turn on the high-voltage power supply, pre-melt the bulk zinc sulfide material in the crucible, and stabilize the air pressure in the vacuum chamber at 3.5×10 -3 Pa. Remove the movable baffle and begin to deposit the zinc sulfide film. Adjust the evaporation current and voltage to keep the electron beam current at 20mA. The evaporation process is controlled by the minimax optical control method until the desired film thickness is deposited. Then move the zinc sulfide thin film prepared by electron beam evaporation into a muffle furnace, and oxidize and anneal in an environment of 900° C....

Embodiment 3

[0022] Using electron beam evaporation technology, the experimental equipment is GDM-450 vacuum coating machine. Put the bulk zinc sulfide with a purity of 99.9% into the crucible, and put the substrate in the fixture after ultrasonic cleaning. Close the vacuum chamber and each pumping valve, and start vacuuming. Heat the substrate to 180°C and make the vacuum degree reach 2×10 -3 Pa. Turn on the high-voltage power supply, pre-melt the bulk zinc sulfide material in the crucible, and stabilize the air pressure in the vacuum chamber at 5×10 -3 Pa. Remove the movable baffle and begin to deposit the zinc sulfide film. Adjust the evaporation current and voltage to keep the electron beam current at 20mA. The evaporation process is controlled by the minimax optical control method until the desired film thickness is deposited. Then move the zinc sulfide thin film prepared by electron beam evaporation into a muffle furnace, and oxidize and anneal in an environment of 400° C. for ...

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Abstract

The preparation method for nano zinc oxide thin membrane by oxygenating zine sulfide at high temperature. Wherein, preparing the thin membrane with common electron-beam evaporation method in Muffle furnace; whole process is simple, convenient and controllable and can avoid oxygen vacancy and zinc interstice and other defects the product has well performance.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide thin film from zinc sulfide, and belongs to the technical field of semiconductor materials. technical background [0002] Zinc oxide is an n-type semiconductor material with direct bandgap and wide bandgap (Eg=3.37ev) with a hexagonal structure. The exciton binding energy at room temperature is 60 mev, and it can emit ultraviolet laser light at room temperature. In addition, zinc oxide thin film also has the characteristics of high thermal conductivity, high electron saturation drift velocity and large critical breakdown voltage, and has become an ideal material for the development of high-frequency, high-power, high-temperature-resistant, and radiation-resistant semiconductor microelectronic devices and circuits. These excellent properties make it the material of choice for the preparation of optoelectronic devices, with great application potential. [0003] Many advanced deposition methods...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C30/00C23C14/06C23C14/58C23C8/10
Inventor 王素梅傅小勇夏国栋邵建达范正修
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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