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Cleaning solution for removing residue

A washing liquid and residue technology, applied in detergent composition, detergent compounding agent, organic washing composition, etc., can solve the problems of weak corrosion resistance of washing liquid and unavoidable base corrosion

Inactive Publication Date: 2003-01-29
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the wiring such as the substrate is also an inorganic substance such as metal, corrosion of the substrate cannot be avoided.
[0015] For the above-mentioned corrosion problems, aromatic hydroxyl compounds, acetylenic alcohols, triazole compounds, etc. have been used as anti-corrosion agents added to cleaning liquids in the past. Although it is conceivable to use them as anti-corrosion agents for the aforementioned cleaning liquids, the obtained Washing liquid is a product with weak corrosion resistance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～17 and comparative example 1～2

[0044] After forming a TiN thin film on an 8-inch silicon wafer, an Al-Si-Cu film was formed using a sputtering device. An oxide film was deposited on it by plasma lamination, and then, a commercially available i-ray positive resist was applied to a thickness of about 1 micron, and prebaked. Then irradiate with i-rays, bake after exposure, develop, rinse, and post-bake. The sample was etched using RIE and the spent resist was ashed using a plasma reactor. The ashing conditions were oxygen gas, 0.04 mmHg, temperature 50° C., and time 300 seconds.

[0045] Test pieces were cut out from the above-treated silicon wafers with a diamond cutter, and washing liquids having the compositions described in Table 1 and Table 2 were prepared, and immersed in the respective residue washing liquids at 23°C. For each ashing residue cleaning solution, a total of 40 tests were performed by dividing the immersion time at intervals of 1 minute from the start of immersion to the elapse of 40 minu...

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Abstract

A cleaning solution for removing a residue which comprises an aqueous solution of a water-soluble polymer containing at least one dissolving agent selected from an amine and a fluoride in a salt form dissolved therein. The cleaning solution allows the effective removal of the residue generated during the production of an electronic circuit and also exhibits high anticorosive effect for an insulating film, an insulating film between low dilectric layers, wiring and the like, and further shows reduced bubbling during use.

Description

technical field [0001] The present invention relates to a residue cleaning solution aimed at cleaning residues generated during ashing, etching, or CMP processing of substrates during the manufacture of electronic circuit patterns. Background technique [0002] ICs, LSIs, or LCDs on semiconductor wafers are generally manufactured by forming fine electronic circuit patterns on substrates using photolithography technology. Specifically, a photoresist is coated on a substrate wafer formed with an insulating film such as silicon oxide and a wiring layer such as Al, Cu, Si, Ti, or a low-dielectric film composed of SOG and fluorine-based resins. , Exposure and development are performed through a mask on which a desired pattern is formed, and a resist pattern is formed on a desired portion. Then, the insulating film, the wiring layer, or the low-dielectric film are etched from the resist pattern, and then the resist is removed. In the formation of such electronic circuit patterns...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D3/37C11D7/10C11D7/26C11D7/32C11D7/34C11D7/50C11D11/00G03F7/42
CPCG03F7/425C11D7/3209C11D3/3765C11D7/34C11D11/0047C11D3/3776G03F7/423C11D7/3281C11D7/10C11D7/3263C11D7/32C11D3/3723C11D3/37C11D7/5013C11D2111/22G03F7/42H01L21/0206C11D7/5009C11D7/5022C11D7/24C11D7/265
Inventor 周藤瑞树野仲彻东野诚司见神一郎
Owner TOKUYAMA CORP
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