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Memristor unit based on dual-ion regulation and preparation method thereof

A memristor and dual-ion technology, which is applied to the field of memristor units based on dual-ion regulation and their preparation, can solve problems such as inability to simulate complex synaptic functions more vividly, and achieve the effect of simple process

Pending Publication Date: 2022-05-27
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently developed memristors based on anion and cation migration, phase transition, ferroelectric reversal, and organic redox reactions are very similar in structure to synapses in the human brain. Some studies have proposed using the internal ion migration process of memristors to simulate biological synapses. Ca 2+ The process of influx, but this research method can only simulate the migration behavior of a single ion in the synapse (in biological synapses except Ca 2+ There are also a large number of protein ions, such as NMDA, protein phosphatase and plasticity-related proteins, etc.), which cannot more vividly simulate the complex functions of synapses

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  • Memristor unit based on dual-ion regulation and preparation method thereof
  • Memristor unit based on dual-ion regulation and preparation method thereof
  • Memristor unit based on dual-ion regulation and preparation method thereof

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specific Embodiment 1

[0031] For specific reference figure 1 , the present invention provides a memristor unit based on dual ion regulation, comprising a substrate 1 and a first electrode 6 and a second electrode 2 arranged on the substrate 1 at intervals, the first electrode 6 and the second electrode 2 A dielectric layer 4 is inserted between 2. The dielectric layer 4 in this specific embodiment is a layered inorganic two-dimensional material. The dielectric layer 4 has a plurality of inter-units, and the van der Waals force is used between each unit. connection, the dielectric layer 4 has a van der Waals gap, the first ion 5 and the second ion 3 are inserted in the van der Waals gap of the dielectric layer 4, the first electrode 6 and the second electrode 2 All are inert metal electrodes or metal oxides, including but not limited to one or both of Au, Pt, Cr, Ti, W, ITO, and the migration barrier of the first ion 5 is greater than the migration of the second ion 3 Potential barrier, the thickne...

specific Embodiment 2

[0032] A method for preparing a memristor based on dual ion regulation, comprising the following steps:

[0033] Step 1. Prepare a dielectric layer 4 on the substrate 1 by a mechanical peeling method; the dielectric layer 4 in this specific embodiment uses a MoS2 film with a thickness of 20 nm; the mechanical peeling method for preparing the dielectric layer 4 specifically includes: using thermal release tape from the MoS2 block A layer of MoS2 film with a preset size was peeled off from the body, and another piece of clean thermal release tape was used to adhere to the MoS2 film. After the two tapes were tightly bonded, the MoS2 film was peeled off again, and a MoS2 film with a thickness of 20 nm was obtained after repeated peeling; then Adhere the heat release tape to SiO2 or Si, and release the heat in a temperature environment of 120 ° C after bonding, and finally use a plasma cleaner to clean it with pure Ar gas;

[0034] Step 2, using ultraviolet lithography and electron...

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Abstract

The memristor unit adopts a simple planar memristor structure, is simple in process, and adopts an ion intercalation process to insert a first ion and a second ion into a Van der Waals gap of a dielectric layer, so that the memristor unit is obtained. Different resistance change phenomena are generated by changing the size and the direction of an electric field applied to the memristor unit, and then the resistance change phenomena are matched with the phenomenon of combined action of multiple ions in the biological synaptic plasticity change process, so that migration behaviors of Ca < 2 + > and protein ions in the biological synaptic are simulated.

Description

technical field [0001] The invention relates to the field of integrated microelectronic device technology and neuromorphic computing, in particular to a memristor unit based on dual ion regulation and a preparation method thereof. Background technique [0002] With the development of information technology, the huge data throughput has put forward more stringent requirements on the computing power and computing speed of the computer. The development of traditional CMOS devices based on the von Neumann architecture is subject to high cost, high power consumption, and high leakage current. And a series of challenges such as "memory wall". [0003] A memristor is a basic circuit element used to represent the relationship between charge and magnetic flux. By changing the magnitude of the electric field applied to the memristor, the functional ions in the device migrate, forming a conductive path inside, and the resistance is changed by high resistance. The state changes to a lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/041Y02D10/00
Inventor 朱小健张峥吴柳孙翠段吉鹏李润伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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