Diamond substrate GaN HEMT and hydrogen terminal MOSFET integrated structure and preparation method thereof

Abstract

The invention discloses a diamond substrate GaN HEMT (High Electron Mobility Transistor) and hydrogen terminal MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) integrated structure and a preparation method thereof, and the structure comprises a diamond substrate layer, an epitaxial structure, a first source electrode, a first drain electrode, a first gate electrode, a first dielectric layer, a second source electrode, a second drain electrode, a second gate electrode and a second dielectric layer, the epitaxial structure is arranged on the diamond substrate layer; the first source electrode and the first drain electrode are arranged on the upper surface of the diamond substrate layer at an interval, the first dielectric layer covers the diamond substrate layer between the first source electrode and the first drain electrode, and the first gate electrode is arranged on the first dielectric layer; the second source electrode, the second drain electrode and the second gate electrode are arranged on the epitaxial structure at intervals, and a second dielectric layer is arranged on the surface of the epitaxial structure. The GaN HEMT device based on the diamond substrate and the hydrogen terminal diamond MOSFET integrated structure are achieved, heat dissipation of the GaN HEMT device is achieved through the diamond layer, and the junction temperature of the device is effectively reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a diamond substrate GaN HEMT and a hydrogen terminal MOSFET integrated structure and a preparation method thereof. Background technique [0002] In recent years, due to the advantages of the third-generation semiconductor material GaN, such as wide band gap, high breakdown electric field and high electron saturation velocity, it has unique advantages in high-frequency and high-power fields such as military, aerospace, and communications. However, the ultra-high integration of semiconductor devices and the application of GaN-based devices in the field of high frequency and high power cannot be ignored. In more severe cases, the device may fail. [0003] The thermal conductivity of GaN itself is only 130W / (m·K) (W / m·Kelvin). Currently, the commonly used substrates for GaN HEMTs mainly include SiC (silicon carbide) substrates, Si (silicon) substrates and sapphire subs...

AI Technical Summary

Problems solved by technology

Among them, even if the SiC substrate with high thermal conductivity is used, its heat dissipation performance is far from meeting the application of GaN effect tubes in the microwave high-power field.

In addition, the current maximum operating temperature of silicon-based MOSFET devices in logic circuits is 125°C. The electrical performance of silicon-based devices exceeding this operating temperature will be greatly degraded or even completely invalid, while the operating temperature of devices used in high-frequency and high-power fields is much higher. at 125°C

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