Preparation method of nano-pillar array

Abstract

The invention relates to the field of process processing, in particular to a method for forming a nanopillar array on a semiconductor substrate, which comprises the following steps of: providing the semiconductor substrate, coating photoresist on the semiconductor substrate, and photoetching on the photoresist to form a pattern; a mask layer is formed on the prepared pattern, and light propagation is stopped through the mask layer; according to the method, a semiconductor substrate containing a mask layer is subjected to electrochemical etching, patterns with different heights are obtained by controlling etching conditions, then the mask layer is removed, the semiconductor substrate comprises a silicon carbide substrate slice or a gallium nitride substrate slice, the length and width of the semiconductor substrate are 2-8 inches, the thickness of the semiconductor substrate is 200-500 micrometers, and the thickness of the semiconductor substrate is 1-10 micrometers. An electron beam direct writing technology is adopted in the photoetching mode, and the pattern is in a nanopillar array shape. By adopting the photoelectrochemical etching method, the large-scale preparation of the nano-pillar array with controllable diameter size and height can be realized on the surface of the wafer-level wide bandgap semiconductor substrate slice, the process is simple, and the yield is high.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a method for preparing a nanocolumn array. Background technique [0002] Wide bandgap semiconductor materials represented by gallium nitride, silicon carbide, zinc oxide and diamond have formed a global industrial chain of materials, devices and applications in the field of power semiconductors. The preparation of wide-bandgap semiconductor material nanowires or nanocolumns has increasingly become a research hotspot in the field of semiconductor devices, and has broad application prospects in nanoelectronics, superjunction power devices, lithium batteries and other new devices. [0003] With the continuous development of the manufacturing technology of the microelectronics industry, there are currently a variety of process methods to achieve specific applications in the field of micro-nano processing of nano-devices. At present, the preparation methods of nano-column struc...

AI Technical Summary

Problems solved by technology

[0003] With the continuous development of the manufacturing technology of the microelectronics industry, there are currently a variety of process methods to achieve specific applications in the field of micro-nano processing of nano-devices. At present, the preparation methods of nano-column structures mainly include electron beam lithography and nano-sphere self-assembly technology. , X-ray lithography, ion beam lithography, nanoimprinting, etc., but these technologies are difficult to achieve large-area and low-cost preparation of ordered and high-quality nanopillar array structures

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