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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as the instability of the hole functional layer film

Pending Publication Date: 2022-01-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the technical problem of unstable hole functional layer film in the existing quantum dot light-emitting diode

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

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preparation example Construction

[0020] On the one hand, the embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, such as figure 1 Shown, this preparation method comprises the steps:

[0021] S01: Provide the substrate;

[0022] S02: Depositing a mixed solution containing a crosslinking agent and a hole function material on the substrate, performing annealing treatment, and then performing a crosslinking reaction under ultraviolet light to obtain a hole function layer;

[0023] Wherein, the hole functional material is an organic material containing a benzyl group.

[0024] In the preparation method of the quantum dot light-emitting diode provided in the embodiment of the present invention, a mixed solution containing a crosslinking agent and a hole functional material is deposited on a substrate for annealing treatment, and then ultraviolet light is irradiated for a crosslinking reaction to obtain a hole functional layer. During the ultraviolet irradiation ...

Embodiment 1

[0061] This embodiment provides a QLED device, its structure is as follows figure 2 As shown, the QLED device includes a substrate 1 , an anode 2 , a hole injection layer 3 , a hole transport layer 4 , a quantum dot light-emitting layer 5 , an electron transport layer 6 , and a cathode 7 sequentially from bottom to top. Among them, the material of the substrate 1 is a glass sheet, the material of the anode 2 is an ITO substrate, the material of the hole injection layer 3 is PEDOT:PSS, and the material of the hole transport layer 4 is 2-hydroxy-4-methoxydiphenyl Ketone and poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-n-butyl)phenyl)-diphenylamine) ], the material of the quantum dot light-emitting layer 5 is CdZnSe / ZnSe / ZnS red quantum dots, the material of the electron transport layer 6 is ZnO, and the material of the cathode 7 is Al.

[0062] The preparation method of the device comprises the following steps:

[0063] Spin-coat the hole injection layer PEDOT:PSS mat...

Embodiment 2

[0065] This embodiment provides a QLED device, its structure is as follows figure 2 As shown, the QLED device includes a substrate 1 , an anode 2 , a hole injection layer 3 , a hole transport layer 4 , a quantum dot light-emitting layer 5 , an electron transport layer 6 , and a cathode 7 sequentially from bottom to top. Among them, the material of the substrate 1 is a glass sheet, the material of the anode 2 is an ITO substrate, the material of the hole injection layer 3 is PEDOT:PSS, and the material of the hole transport layer 4 is 2-hydroxy-4-n-octyloxydi Benzophenone and poly(9-vinylcarbazole), the material of the quantum dot light-emitting layer 5 is CdZnSe / ZnSe / ZnS red quantum dots, the material of the electron transport layer 6 is ZnO, and the material of the cathode 7 is Al.

[0066] The preparation method of the device comprises the following steps:

[0067] Spin-coat the hole injection layer PEDOT:PSS material on the anode ITO, then anneal at 100°C for 15min; then ...

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Abstract

The invention belongs to the technical field of display devices, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The preparation method of the quantum dot light-emitting diode comprises the following steps: providing a substrate, depositing a mixed solution containing a cross-linking agent and a hole function material on the substrate, carrying out annealing treatment, and then carrying out a cross-linking reaction under ultraviolet irradiation to obtain a hole function layer, wherein the hole functional material is an organic material containing benzyl. In the quantum dot light-emitting diode obtained by the preparation method, the formed hole function layer film has good stability and is not easily influenced by a solvent used for preparing the quantum dot light-emitting layer, so that the device has a smooth and complete film form, the light-emitting property of the device can be improved, and the service life of the device can be prolonged.

Description

technical field [0001] The invention belongs to the technical field of display devices, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Utilizing the quantum confinement effect of quantum dots (QDs), quantum dot materials with extremely high fluorescence quantum yields can be developed. Currently, quantum dots with fluorescence quantum yields close to 100% can be prepared. In addition, the full width at half maximum (FWHM<30nm) of the luminescence peak of quantum dots is very narrow, indicating that quantum dots can emit light with a purer spectrum and a wider color gamut. Therefore, the electroluminescent device based on quantum dot light-emitting diode (QLED) prepared by quantum dot has a larger color gamut coverage, and the unique core-shell structure of quantum dot makes it have better light, heat, water and oxygen stability than OLED. sex. By adjusting the chemical composition and parti...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K71/12H10K71/40H10K85/10H10K50/115H10K50/15H10K85/00H10K71/421
Inventor 周礼宽邹文鑫
Owner TCL CORPORATION
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