Method for preparing KTP nonlinear runway type micro-ring resonator

A microring resonator, racetrack-type technology, applied in the direction of nonlinear optics, instruments, light guides, etc., can solve the problems of unsuitable application scenarios, weak resistance to photorefraction, low light damage threshold, etc., and achieve good operability and reproducibility, simplification of the production process, and the effect of a high optical damage threshold

Active Publication Date: 2022-01-14
SHANDONG NORMAL UNIV
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] A successful case is a nonlinear waveguide microring resonator prepared in an on-chip lithium niobate thin film. However, as a nonlinear material with excellent performance, lithium niobate crystal also has defects that cannot be ignored, such as optical damage The threshold value (the maximum optical power that can be tolerated per unit area) is low, and the ability to resist photorefraction (refractive index change caused by light irradiation) is weak, which also determines that the microring resonator based on lithium niobate is not suitable for Higher power application scenarios;

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing KTP nonlinear runway type micro-ring resonator
  • Method for preparing KTP nonlinear runway type micro-ring resonator
  • Method for preparing KTP nonlinear runway type micro-ring resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] according to Figure 1-9 As shown, the present embodiment proposes a method for preparing a KTP nonlinear racetrack microring resonator, comprising the following steps:

[0045] Step 1. KTP wafer processing

[0046] First of all, the surface polishing operation is performed on the cut and formed KTP wafer. After the polishing operation is completed, it is cleaned. After cleaning, it is stored in a storage device for standby;

[0047] Step 2. Ion implantation

[0048] Take out the spare KTP wafer in step 1, then use ion implantation equipment to implant the KTP wafer through ion accelerator accelerated ion, as figure 2As shown, in the KTP wafer surface below several micron depths form the isolation layer that the refractive index drops, the part above the isolation layer is waveguide layer, in described step 2, the kind of ion is a kind of in carbon ion or oxygen ion, In the second step, the range of a few microns is 5-10 microns. Only through one process of ion impl...

Embodiment 2

[0058] according to Figure 10 As shown, the present embodiment takes the frequency doubling (second harmonic) generation of the band around 1064 nanometers as an example, wherein, the appended Figure 10 The upper part of the figure is a schematic diagram of the 1064nm frequency doubling of the microring resonator, and the arrow indicates the direction of light propagation. When the KTP crystal is properly phase-matched (cut along a specific angle, such as θ=90°, φ=23.5°, Class II phase matching can be achieved), which will meet the phase matching conditions of nonlinear frequency doubling.

[0059] At this time, when the 1064nm laser passes through the straight waveguide, it will be coupled into the microring resonator in the form of evanescent wave (Evanescent Wave), and it will cycle back and forth in the resonator to oscillate; and it will be continuously converted to 532nm in the propagation path The left and right frequency-doubled light will also be coupled into the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a KTP nonlinear runway type micro-ring resonator. The method comprises six steps of KTP wafer treatment, ion implantation, electron beam exposure, subsequent treatment, ion etching treatment and final treatment. Preparation of a film-shaped waveguide structure similar to an on-chip lithium niobate film material is prepared through one procedure of ion implantation. The production process is greatly simplified, the time is shortened, and the cost is significantly reduced. Compared with an existing lithium niobate nonlinear micro-ring resonator, the KTP nonlinear micro-ring resonator prepared by the method has the advantages that the light damage threshold is higher, the output power of nonlinear variable-frequency light can be increased to milliwatt magnitude from microwatt, the method is suitable for the situation that input and output optical signals are pulse laser, and ion injection, electron beam exposure, metal evaporation deposition coating and reactive ion etching are relatively mature micro-nano machining technologies, so that the method has good operability and repeatability.

Description

technical field [0001] The invention relates to the fields of ion beam material modification, Wiener processing and integrated optics, in particular to a method for preparing a KTP nonlinear racetrack microring resonator. Background technique [0002] A microring resonator is a component of integrated optics, which contains at least one closed ring-shaped optical path, which allows light to circulate in it. Light of a specific wavelength, due to resonance in the microring resonator, that is, interference constructive, and continuously strengthened; [0003] At present, microring resonators are mostly used in silicon-based integrated optics, mainly based on silicon, silicon dioxide, silicon carbide and other materials. This is because the processing technology of silicon-based materials has been relatively perfect and mature, and is widely used in silicon-based integrated circuits. The lithography of semiconductor chip processing and the subsequent reactive ion etching techn...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/13G02B6/134G02B6/136G02B6/132G02F1/355G02F1/365
CPCG02B6/13G02B6/1347G02B6/136G02B6/132G02F1/3553G02F1/365G02B6/12007G02B6/29338G02B2006/12176
Inventor 陈琛韩张华
Owner SHANDONG NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products