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3D printing diamond/metal matrix composite material and preparation method and application thereof

A composite material and 3D printing technology, applied in the field of composite materials, can solve the problems of inability to prepare high density, diamond damage, low density, etc., and achieve the effect of eliminating structural defects, improving bonding state, and promoting reaction

Active Publication Date: 2021-12-10
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, when using the prior art 3D printing technology to manufacture diamond / metal matrix composites; it is impossible to prepare high-density diamond / metal matrix composites, because the preparation of high-density diamond / metal matrix composites requires a larger laser Power, and the laser beam generated by it will cause obvious damage to the diamond, and some may have been graphitized. If the laser power used is small, although the thermal damage of the diamond is small, the density is low (70-80%) and the performance is insufficient.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of core-shell structure doped diamond

[0042] Using 150μm single-crystal diamond particles as raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0043] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =2:97:1, the growth pressure is 3Kpa, and the number of growths is 2 t...

Embodiment 2

[0048] Preparation of core-shell structure doped diamond

[0049] Using 150μm single-crystal diamond particles as raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0050] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 3μm obtained by controlling the deposition time; during the chemical vapor deposition, the growth deposition is divided into three stages, the first During deposition, the mass flow ratio of the gas introduced is: CH 4 :...

Embodiment 3

[0056] Preparation of core-shell structure doped diamond

[0057] Using 200μm single-crystal diamond particles as raw materials, a polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow rate of the atmosphere is CH 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0058] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =...

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Abstract

The invention discloses a 3D printing diamond / metal-based composite material and a preparation method and application thereof. The 3D printing diamond / metal-based composite material comprises core-shell structure doped diamond, a metal-based material and an additive, and the core-shell structure doped diamond comprises a core, a transition layer, a shell, a coating, a porous layer and a modification layer. The preparation method of the material comprises the following steps: uniformly mixing diamond, a metal matrix and the additive, and then carrying out 3D printing according to a three-dimensional CAD slicing model to finally obtain the composite material designed by the model. According to the 3D printing diamond / metal matrix composite material, the obtained metal matrix and the diamond surface are mainly subjected to metallurgical bonding, and the bonding strength of the diamond / metal matrix can be improved, so that the use performance of the composite material and a diamond tool is improved, the core-shell structure doped diamond is good in ablation resistance, and the problem of diamond thermal damage in the 3D printing forming process can be effectively avoided and reduced.

Description

technical field [0001] The invention belongs to the field of composite materials, and in particular relates to a 3D printing diamond / metal matrix composite material and its preparation method and application. Background technique [0002] With the rapid development of science and technology, the power and integration of electronic equipment used in many fields such as aerospace, military, industry, and national production are getting higher and higher. The problem of heat dissipation has become an important factor restricting the development of these industries. Especially with the advent of the 5G communication era, the integration of electronic and semi-finished devices has increased geometrically, which has led to a rapid increase in the heat density of electronic devices. Studies have shown that for every 10°C increase in the temperature of electronic components, the failure rate increases by about 1%. In addition, 55% of the failures in electronic equipment are caused b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F10/28B22F1/00B22F10/64B33Y10/00B33Y70/10B33Y40/20
CPCB22F10/28B22F10/64B33Y10/00B33Y70/10B33Y40/20Y02P10/25C22C26/00C01B32/25C23C16/278C22C33/0228C22C33/0278B33Y50/02B33Y80/00B22F10/32B22F10/36B22F10/366C23C16/28C23C14/185C22C30/02C22C9/00C22C19/05C22C30/00B22F2998/10C22C1/05B22F10/322B22F10/38B22F10/34B22F3/1003B22F3/105B22F2201/11B22F2201/20B22F2203/11B22F2207/01
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
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