3D printing diamond/metal matrix composite material and preparation method and application thereof
A composite material and 3D printing technology, applied in the field of composite materials, can solve the problems of inability to prepare high density, diamond damage, low density, etc., and achieve the effect of eliminating structural defects, improving bonding state, and promoting reaction
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Embodiment 1
[0041] Preparation of core-shell structure doped diamond
[0042] Using 150μm single-crystal diamond particles as raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.
[0043] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =2:97:1, the growth pressure is 3Kpa, and the number of growths is 2 t...
Embodiment 2
[0048] Preparation of core-shell structure doped diamond
[0049] Using 150μm single-crystal diamond particles as raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.
[0050] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 3μm obtained by controlling the deposition time; during the chemical vapor deposition, the growth deposition is divided into three stages, the first During deposition, the mass flow ratio of the gas introduced is: CH 4 :...
Embodiment 3
[0056] Preparation of core-shell structure doped diamond
[0057] Using 200μm single-crystal diamond particles as raw materials, a polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow rate of the atmosphere is CH 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.
[0058] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =...
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