N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and preparation method thereof

Abstract

The invention relates to the field of material science, and provides an N-type copper-doped trimagnesium diantimonide alloy thermoelectric material and a preparation method thereof. The chemical general formula of the N-type copper-doped trimagnesium diantimonide alloy thermoelectric material is Mg<3.4>Sb<1.5>Bi<0.49>Te<0.01>+xCu, x is an actual component of a doped element Cu, and x is greater than or equal to 0.001 and less than or equal to 0.006. According to the preparation method, an inert atmosphere ball milling method is adopted for preparing a powder sample, a discharge plasma sintering method is adopted for preparing a block sample, electrons are introduced through Cu doping, cooperative regulation and control over the electrical conductivity and the thermal conductivity are achieved, and the highest thermoelectric optimal zT of the prepared N-type copper-doped trimagnesium diantimonide alloy reaches 1.62. The method provided by the invention is simple to operate, can be suitable for other thermoelectric materials, and provides a new scheme for improving the thermoelectric figure of merit.

Description

technical field [0001] The present application relates to the field of material science, in particular to an N-type copper-doped antimony trimagnesium alloy thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials are functional materials that can directly realize heat-electric conversion, and have the advantages of no pollution, small size, light weight, and no noise. Thermoelectric materials can recycle the waste heat generated by the combustion of fossil energy to generate electricity, thereby improving the utilization rate of fossil energy and playing an important role in solving the energy crisis. For example, Zintl-phase compounds have been widely studied by scientists due to their conformity to the concept of "phonon glass-electron crystal" (PGEC) [1] . Some Zintl phase compounds are known p-type semiconducting materials with high thermoelectric properties, Te-doped Mg was recently discovered 3 Sb 2 The base ...

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Problems solved by technology

Its calculation formula is zT=S 2 σ / κ. It can be seen from the above formula that the thermoelectric figure of merit zT is mainly determined by three thermoelectric parameters: electrical conductivity σ, Seebeck coefficient S and total thermal conductivity κ. These three thermoelectric parameters are often coupled with each other and are difficult to control independently. , which has become a major problem restricting the development of thermoelectric materials

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