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Preparation of AFE capacitor with high energy storage density and high energy storage efficiency, anti-ferroelectric film layer and preparation thereof and flexible AFE capacitor

A capacitor and film layer technology, which is applied in the direction of fixed capacitor dielectric, hybrid/electric double layer capacitor manufacturing, multilayer capacitor, etc. Lattice matching degree, simple preparation method, and the effect of improving energy storage performance

Active Publication Date: 2021-03-05
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although AFE capacitors have more ideal energy storage performance, it is difficult for most AFE capacitors to achieve a sufficiently large polarization strength and a higher breakdown voltage at the same time, which greatly reduces the actual energy storage performance of AFE capacitors.

Method used

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  • Preparation of AFE capacitor with high energy storage density and high energy storage efficiency, anti-ferroelectric film layer and preparation thereof and flexible AFE capacitor
  • Preparation of AFE capacitor with high energy storage density and high energy storage efficiency, anti-ferroelectric film layer and preparation thereof and flexible AFE capacitor
  • Preparation of AFE capacitor with high energy storage density and high energy storage efficiency, anti-ferroelectric film layer and preparation thereof and flexible AFE capacitor

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preparation example Construction

[0087] Most AFE capacitors are difficult to achieve a higher breakdown voltage while achieving sufficiently large polarization, which makes the actual energy storage performance of the AFE capacitor greatly reduced. To this end, the present application provides a method of preparing a high reservoir density, high storage efficiency, as shown in Figure 1, including the following steps:

[0088] The buffer layer 20 is deposited on the substrate 10;

[0089] A first electrode layer 30 is deposited on the buffer layer 20;

[0090] Anti-ferrous electrical thin film layer 40 containing two or more thin films is deposited on the first electrode layer 30;

[0091] A second electrode layer 50 is deposited on the antiferromic thin film layer 40 to obtain an AFE capacitor;

[0092] Among them therein, the antifer electrical thin film layer 40 is deposited by a pulsed laser, and the elements contained in the adjacent film may be the same or different.

[0093] The antifer electrical thin film...

Embodiment 1

[0120] A method of preparing a pure PLZT of high energy storage density and high storage efficiency on a flexible substrate, including the following steps:

[0121] (1) Select the flexible substrate while cleaning the pretreatment, and then performs bonding; the thickness of the flexible substrate is 30 nm, and the pretreatment includes the following steps:

[0122] A. Select the surface of the surface of the surface as a flexible substrate, the MICA substrate crystal plane orientation (001), as a new type of flexible transparent insulating substrate having a single-oblique crystal structure, can be used for some functional oxide capacitor Growth, thereby further achieving the performance of PLZT-STO regulating different excitation aromal components;

[0123] b, with a polyimide tape to work on the work desktop to make it flat;

[0124] C. Clean a complete MICA substrate to a polyimide tape attached to the desktop with tweezers to adhere the peeling;

[0125] D. Repeat step C unti...

Embodiment 2

[0137] A method of preparing high energy storage density and high storage efficiency on a flexible substrate, including the following steps:

[0138] (1) Select the flexible substrate while cleaning the pretreatment, and then performs bonding; the thickness of the flexible substrate is 30 nm, and the pretreatment includes the following steps:

[0139] A. Select the surface of the surface of the surface as a flexible substrate, the MICA substrate crystal plane orientation (001), as a new type of flexible transparent insulating substrate having a single-oblique crystal structure, can be used for some functional oxide capacitor Growth, thereby further achieving the performance of PLZT-STO regulating different excitation aromal components;

[0140] b, with a polyimide tape to work on the work desktop to make it flat;

[0141] C. Clean a complete MICA substrate to a polyimide tape attached to the desktop with tweezers to adhere the peeling;

[0142] D. Repeat step C until the stripping...

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Abstract

The invention relates to preparation of an AFE capacitor with high energy storage density and high energy storage efficiency, an anti-ferroelectric film layer and preparation thereof, and a flexible AFE capacitor. The preparation method of the AFE capacitor comprises the following steps: depositing a buffer layer on a substrate; depositing a first electrode layer on the buffer layer; depositing anantiferroelectric thin film layer comprising more than two layers of thin films on the electrode layer; and depositing a second electrode layer on the antiferroelectric film layer to obtain an AFE capacitor, wherein the antiferroelectric thin film layer is deposited through pulse laser, and elements contained in adjacent thin films can be the same or different. According to the AFE capacitor prepared by the invention, the maximum breakdown voltage is improved; meanwhile, according to the AFE capacitor layer prepared by using a method of different excitation number components, the energy storage density and the energy storage efficiency of the AFE capacitor are improved; and the AFE capacitor has excellent fatigue resistance and flexible mechanical properties, the polarization and other properties of the AFE capacitor can be kept in a bent state, and a new way is developed for development and application of novel energy storage equipment.

Description

Technical field [0001] The present application relates to the field of antiferrogen oxide materials, and more particularly, it relates to the preparation of the AFE capacitor of high storage density, high storage efficiency, anti-ferroelectric film layer and preparation, AFE capacitor. Background technique [0002] The energy storage capacitor is also called electrochemical capacitors or super capacitors, which have excellent overall performance, fast storage capacitance, long battery life, can be connected in parallel to form a supercapacitor module, and the pressureable pressure is more high capacity. The energy storage capacitor is the core of the high-efficiency energy storage device capable of achieving high energy storage and high power densities, and has good energy storage efficiency. [0003] Anti-ferroelectric (AFE) or ferroelectric (Fe) material has the advantages of large dielectric constant, high resistance, polarized switching speed, and width operating temperature ...

Claims

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Application Information

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IPC IPC(8): H01G11/84H01G4/33H01G4/08C23C14/28C23C14/08
CPCH01G11/84H01G4/33H01G4/08C23C14/28C23C14/08
Inventor 钟高阔李江宇陈骞鑫任传来张园
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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