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Method for welding ultra-pure copper target material and back plate

A welding method and pure copper technology, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of no obvious improvement in welding strength, grain growth, etc. The effect of enhancing the welding bond

Pending Publication Date: 2020-12-25
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method mainly eliminates the stress concentration area at the edge of the target by adding spacers, and suppresses the abnormal growth of grains in this area, and there is no obvious improvement measure for the welding strength.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] This embodiment provides a method for welding an ultra-high-purity copper target and a back plate, and the welding method includes the following steps:

[0078] (1) The welding surface of the ultra-high-purity copper target with a purity of 6N is turned and smoothed with a diamond blade, and then ultrasonically cleaned with isopropanol. The cleaning time is 25 minutes. Vacuum drying is carried out within 30 minutes after ultrasonic cleaning. The temperature is 70°C, the vacuum is 0.01Pa, and the time is 70min;

[0079] Turning the welding surface of the 5052 aluminum alloy back plate to form threads, the pitch of the threads is 0.75mm, the depth of the threads is 0.55mm, and then surface treatment, coating treatment and vacuum drying treatment are carried out in sequence, and the surface treatment is sequentially Including primary washing, pickling, secondary washing and drying, the acid solution used in the pickling is composed of hydrofluoric acid, nitric acid and wat...

Embodiment 2

[0085] This embodiment provides a method for welding an ultra-high-purity copper target and a back plate, and the welding method includes the following steps:

[0086] (1) The welding surface of the ultra-high-purity copper target with a purity of 6N5 is turned and smoothed with a diamond blade, and then ultrasonically cleaned with isopropanol. The cleaning time is 20 minutes. Vacuum drying is carried out within 25 minutes after ultrasonic cleaning. The temperature is 60°C, the vacuum is 0.008Pa, and the time is 80min;

[0087] Turning the welding surface of the 5005 aluminum alloy back plate to form threads, the pitch of the threads is 0.65mm, and the depth of the threads is 0.6mm, and then surface treatment, coating treatment and vacuum drying treatment are carried out in sequence, and the surface treatment is sequentially Including primary washing, pickling, secondary washing and drying, the acid solution used in the pickling is composed of hydrofluoric acid, nitric acid an...

Embodiment 3

[0093] This embodiment provides a method for welding an ultra-high-purity copper target and a back plate, and the welding method includes the following steps:

[0094] (1) The welding surface of the ultra-high-purity copper target with a purity of 6N is turned and smoothed with a diamond blade, and then ultrasonically cleaned with isopropanol. The cleaning time is 30 minutes. Vacuum drying is carried out within 20 minutes after ultrasonic cleaning. The temperature is 80°C, the vacuum degree is 0.006Pa, and the time is 60min;

[0095] Turning the welding surface of the 5083 aluminum alloy back plate to form threads, the pitch of the threads is 0.85mm, the depth of the threads is 0.5mm, and then surface treatment, coating treatment and vacuum drying treatment are carried out in sequence, and the surface treatment is sequentially Including primary washing, pickling, secondary washing and drying, the acid solution used in the pickling is composed of hydrofluoric acid, nitric acid ...

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Abstract

The invention discloses a method for welding an ultra-pure copper target material and a back plate. The welding method comprises the steps that coating of a welding surface of the back plate with a thread is performed; then the back plate and the ultra-pure copper target material are assembled; the assembled ultra-pure copper target material and back plate are put into a sheath; the sheath is sealed and vacuumized; the vacuumized sheath is subjected to hot isostatic pressing treatment; and welding of the ultra-pure copper target material and the back plate is completed. According to the method, as the structure of the welding surface of the back plate is improved, threaded protrusions can be embedded into the target material, and then a combination effect of the target material and the back plate is enhanced, then diffusivity of a coating film is utilized, and the target material and the welding surface of the back plate are fully covered, so that the welding combination degree betweenthe target material and the back plate is improved, and the welding strength is high; the coating film is placed on the back plate, so that completeness of the coating film is ensured during welding,and damage caused to the coating film by the threaded protrusions is avoided. According to the welding method, a hot isostatic pressing process is adopted to control the size of crystal grains of thetarget material, so that the target material meets application requirements of a super-large-scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of target material preparation and relates to a welding method for an ultra-high-purity copper-based target material and a back plate. Background technique [0002] With the rapid development of semiconductor manufacturing technology and VLSI, the integration of integrated circuit chips is getting higher and higher, and the application of multilayer metal interconnection technology is becoming more and more extensive. At present, the size of semiconductor chips has been reduced to the nanometer level. At this time, the resistance-capacitance delay and electromigration of metal interconnection lines have become the main factors affecting chip performance, while traditional aluminum and aluminum alloy interconnection lines can no longer meet ultra-large-scale integration. Circuit process requirements. Compared with aluminum, copper has better resistance to electromigration and electrical conductivity, especia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/02B23K20/14B23K20/24
CPCB23K20/026B23K20/14B23K20/24
Inventor 姚力军边逸军潘杰王学泽慕二龙曹欢欢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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