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Self-aligned GaN Schottky diode and manufacturing method thereof

A technology of Schottky diode and manufacturing method, applied in diode, semiconductor/solid-state device manufacturing, semiconductor device and other directions, can solve the problems of current crowding, low plane process compatibility, complex manufacturing process, etc.

Active Publication Date: 2020-10-23
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process of this scheme is relatively complicated, and the compatibility with the current planar process is low.
[0006] Chinese patent application 201710370209.0 discloses "a preparation method of a GaN-based Schottky diode with a quasi-vertical structure", which provides a preparation method for a GaN-based Schottky diode with a quasi-vertical structure, which can reduce the series resistance of the device and improve the working Frequency, to solve the problem of current congestion
However, this scheme is a quasi-vertical structure diode fabrication method, which is less compatible with the current planar process.

Method used

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  • Self-aligned GaN Schottky diode and manufacturing method thereof
  • Self-aligned GaN Schottky diode and manufacturing method thereof
  • Self-aligned GaN Schottky diode and manufacturing method thereof

Examples

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Embodiment 1

[0044] Example 1: Prepare a SiC substrate 1, the width of the spacer 6 is 150nm, the metal of the T-shaped anode 4 is Ni / Pt / Au, and the doping concentration of the n-GaN layer 3 is 2E17 / cm 3 , the doping concentration of n+GaN layer 2 is 5E19 / cm 3 Specifications of a self-aligned GaN Schottky diode, its fabrication process is:

[0045] 1) On a SiC substrate 1, a 1 μm thick n+GaN layer 2 is grown at 950°C by metal organic chemical vapor deposition technique MOCVD, the doping source is Si, and the doping concentration is 5E19 / cm 3 , and then grow a 1μm thick n-GaN layer 3, the doping source is Si, and the doping concentration is 2E17 / cm 3 .

[0046] 2) Lithograph the anode pattern on the top of the n-GaN layer 3, and then use evaporated anode metal to peel off to form a T-shaped anode 4; the material of the evaporated anode metal is Ni, Pt and Au from bottom to top, and the thickness of the metal layer is respectively 30nm, 50nm and 600nm; the process conditions of electron b...

Embodiment 2

[0053] Example 2: Si substrate 1 is prepared, the width of spacer 6 is 20nm, the metal of T-type anode 4 is W / Ti / Au, and the doping concentration of n-GaN layer 3 is 5E17 / cm 3 , the doping concentration of n+GaN layer 2 is 4E20 / cm 3 Specifications of a self-aligned GaN Schottky diode, its fabrication process is:

[0054] 1) On the SiC substrate 1, a 2 μm thick n+GaN layer 2 is grown at 950°C by using the metal organic chemical vapor deposition technique MOCVD, the doping source is Ge, and the doping concentration is 4E20 / cm 3 , and then grow a 300nm thick n-GaN layer 3, the doping source is Ge, and the doping concentration is 5E17 / cm 3 .

[0055] 2) Lithograph the anode pattern on the top of the n-GaN layer 3, then sputter the anode metal, and peel off to form a T-shaped anode 4; the material of the evaporated anode metal is W, Ti and Au from bottom to top, and the thickness of the metal layer is respectively 20nm, 20nm and 700nm; the process conditions of magnetron sputter...

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Abstract

The invention relates to a self-aligned GaN Schottky diode and a manufacturing method thereof, and belongs to the technical field of semiconductor device preparation. The diode comprises a substrate,an n + GaN layer, an n-GaN layer, a T-type anode and an air bridge, wherein an isolation groove is formed in the upper portion of the substrate, a cathode is arranged on the n + GaN layer, a spacer region is further arranged between the n-GaN layer and the cathode, the T-shaped anode is located over the n-GaN layer, and the diameter of the n-GaN layer is equal to that of the T-shaped anode. According to the self-aligned GaN Schottky diode provided by the invention, the distance between the cathode and the anode can be greatly shortened; the series resistance of the n + GaN layer is reduced, the cut-off frequency and power of the diode is improved, and the preparation process is highly compatible with a conventional planar structure Schottky diode, and is wide in application prospect in thefields of microwave and millimeter wave rectifiers, amplitude limiters, terahertz frequency multipliers and the like.

Description

technical field [0001] The invention relates to a self-aligned GaN Schottky diode and a manufacturing method thereof, belonging to the technical field of semiconductor device preparation. [0002] technical background [0003] Compared with Si, GaAs, InP and other materials, the wide bandgap characteristics of the third-generation semiconductor GaN materials give GaN Schottky diodes great advantages of high breakdown and high power. Therefore, Schottky diodes based on GaN semiconductors are expected to overcome the shortcomings of traditional semiconductor diodes in terms of output power or withstand power, and have broad prospects in high-power rectifiers, limiters, and frequency multipliers. [0004] Similar to GaAs Schottky diodes, due to the simple fabrication process and high compatibility, GaN Schottky diodes usually have a planar structure, that is, the anode and the cathode are located on the same plane, and there is a certain distance between the cathode and the anod...

Claims

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Application Information

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IPC IPC(8): H01L29/417H01L29/47H01L29/872H01L21/28H01L21/329
CPCH01L29/872H01L29/66212H01L29/401H01L29/417H01L29/475
Inventor 张凯代鲲鹏陈韬牛斌朱广润陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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