P-surface metal preparation method of ridge-type GaAs-based laser with deep groove

Abstract

The invention discloses a P-surface metal preparation method of a ridge-type GaAs-based laser with a deep groove. The method is characterized by coating negative photoresist on a silicon dioxide passive film, roughening an Au layer at the uppermost end in a metal layer on the negative photoresist, and preparing an Au conducting layer after roughening treatment, so that the covering stability of the Au conducting layer can be improved; the preparation rate of the metal layer is relatively low, the growth rates of the Au conducting layer from the first Au layer to the fourth Au layer are sequentially increased, vapor deposition of a P-surface metal layer composed of the metal layer and the Au conducting layer of the ridge waveguide structure laser with the groove depth larger than 2 micronscan be completed through different growth rates, so that P-surface polymer filling and leveling-up are avoided, and metal faults are prevented; operation is convenient, the process steps are simplified, and the production period is shortened; and meanwhile, consumption of raw materials is reduced, and repeatability and stability of the whole process are improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor lasers, in particular to a P-plane metal preparation method of a ridge-type GaAs-based laser with deep grooves. Background technique [0002] Since the advent of semiconductor lasers, due to their advantages such as small size, high power, long life, and convenient use, they have been favored in the fields of optical storage, optical communications, national defense, and medical treatment. Due to the impact of product production process implementation and product performance, as shown in Figure 1, most of the current semiconductor lasers use a ridge waveguide structure, that is, the current injection area of ​​the ridge is relatively high, and the two sides of the ridge groove 2 It is necessary to etch or etch away a part of the epitaxial material, resulting in an uneven surface between the ridge-shaped part of the chip surface and other areas, which makes it difficult for the ...

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Problems solved by technology

[0004] Moreover, due to the needs of product upgrading, many products currently need to etch relatively deep grooves on the surface of the chip, some of which have reached more than 4um. Moreover, due to the differences in the materials of each part of the epitaxial layer, in the process of wet etching , the corrosion rate of various materials is different, and it is easy to cause the capping phenomenon of the ridge top area during the corrosion process

The above two methods are difficult to meet the needs of the P-side metal layer of the ridge waveguide structure with deep grooves

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