Preparation method of cathode interface layer with high air stability
A cathode interface layer and air stability technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of poor interface barrier and device stability, reduce interface barrier, improve transmission efficiency, Improve the effect of interface contact
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[0030] The present invention will be further described below in conjunction with the accompanying drawings.
[0031] The reaction equation of the present invention is attached Figure 4 , the specific reaction steps are as follows:
[0032] Synthetic steps of high air stability cathode interface layer FBFTFSI and FBFPFSI:
[0033] (1) Synthesis of Compound 1: Add 2-bromofluorene (7.35g, 30mmol), 1,6-dibromohexane (36.29g, 150mmol), 0.1M NaOH (10mL), Phase transfer catalyst tetra-n-butylammonium bromide 10mg and 60mL acetone. The reaction solution was refluxed and stirred overnight at 80°C, and the acetone was spin-dried by a vacuum rotary evaporator, and excess 1,6-dibromohexane was removed by vacuum distillation. : 1 through a silica gel column and purified, and dried with anhydrous magnesium sulfate to obtain a white solid product with a yield of 79%. 1 H NMR (400MHz, CDCl 3 ),(ppm):7.54-7.58(t,3H),7.48-7.45(d,2H),7.44(s,2H),3.31-3.28(t,4H),1.95-1.90(t,4H),1.71 -1.64(t...
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