Manufacturing method of semiconductor photoelectronic device

Abstract

The invention discloses a manufacturing method of a semiconductor photoelectronic device, the manufacturing method comprises the step of growing and forming a photoelectronic device structure on a substrate, wherein the photoelectronic device structure comprises an N-type layer, an active region light-emitting layer and a P-type layer; and arranging a mask on the photoelectronic device structure,and performing ion implantation on any one or more of the N-type layer, the active region light-emitting layer and the P-type layer by using the mask so as to regulate and control the area and / or theshape of a light-emitting region of the photoelectronic device structure. According to the manufacturing method of the semiconductor photoelectronic device, the effective use area of the chip can be increased, the damage effect of the side wall of the material is reduced, the optical crosstalk problem of the device is eliminated, and the light-emitting efficiency of the device is improved; in actual production, the distance between the high-impedance isolation regions can be accurately adjusted by changing the size of the mask, so that the characteristic size of the chip is flexibly defined, and the preparation of a device with the size of several microns to hundreds of microns is realized.

Description

technical field [0001] The invention particularly relates to a method for manufacturing a semiconductor optoelectronic device, belonging to the technical field of semiconductor device preparation. Background technique [0002] Light-emitting diode miniaturization and matrix technology (Micro-LED) in the field of semiconductor optoelectronic devices refers to a high-density and small-size LED array display technology integrated on the same chip with a dot pitch as low as microns. The addressable LEDs that are driven to light as independently controlled red, green and blue sub-pixels form a display system with high speed, high contrast and wide viewing angle characteristics. Compared with LCD and OLED display technologies, Micro-LED has the advantages of stable material properties, high resolution and color saturation, short response time, no image burn-in, simple optical system, low power consumption, and strong durability. Therefore, Micro-LED - LED is bound to develop into...

AI Technical Summary

Problems solved by technology

Usually, the sidewall etching damage caused by dry etching (RIE, ECR, ICP) in the miniaturization process will seriously restrict the chip performance of Micro-LEDs, and high-energy etching particles will bombard the material lattice and form defects on the material surface At the same time, etching particles will be injected into the material, and the resulting sidewall damage effect will extend a distance of several μm to the inside of the chip, which greatly reduces the usable area of ​​Micro-LED devices, such as: sidewall damage effect The usable area resulting in 5μmx5μm Micro-LEDs is only about 4% of the total chip size

At the same time, chip sidewall damage defects will form deep energy levels inside the material that act as non-radiative recombination centers, greatly increasing the non-radiative recombination rate of the device, making the peak luminous efficiency of Micro-LEDs usually lower than 10%, which results in tens of microns Class Micro-LED does not yet have the advantage of low power consumption

In addition, with the reduction of the size of Micro-LED devices and the adjacent spacing, the lateral beam expansion will cause serious optical crosstalk between adjacent devices, which greatly affects the color uniformity and resolution of Micro-LED devices. cause color distortion

[0004] The existing Micro-LED chip structure and its manufacturing technology still cannot make Micro-LED meet the requirements of commercialization

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