HEMT device based on Cu substrate and preparation method thereof

A substrate and device technology, applied in the field of HEMT devices, can solve problems such as thermal stability of HEMT devices, and achieve the effects of excellent crystal quality, small device leakage current, and stable performance

Pending Publication Date: 2020-02-18
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention can solve the problem of thermal stability of HEMT devices under high output power

Method used

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  • HEMT device based on Cu substrate and preparation method thereof
  • HEMT device based on Cu substrate and preparation method thereof
  • HEMT device based on Cu substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Step 1. At room temperature, clean and dry the single crystal Cu(111) substrate, put it into a rapid annealing furnace, pass in 25 sccm argon gas, and anneal at 400°C to obtain a clean single crystal Cu substrate, and into a pulsed laser deposition (PLD) chamber.

[0042] Step 2. Through the general process of electron beam evaporation, a graphite layer of 5 μm is selectively deposited on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically. The ratio is 2:1.

[0043]Step 3. Through the general process method of pulsed laser deposition (PLD), set the PLD laser energy to 380mJ, maintain the frequency at 20Hz, maintain the growth temperature at 600°C, maintain the distance between the target and the substrate at 4mm, and maintain the cavity pressure at 4mTorr , a 2 μm carbon-doped GaN high-resistance layer was sequentially grown on a Cu(111) substrate (the doping concentr...

Embodiment 2

[0047] Step 1. At room temperature, clean and dry the single crystal Cu(111) substrate, put it into a rapid annealing furnace, pass in 25 sccm argon gas, and anneal at 400°C to obtain a clean single crystal Cu substrate, and into a pulsed laser deposition (PLD) chamber.

[0048] Step 2. Through the general process of electron beam evaporation, a graphite layer of 5 μm is selectively deposited on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically. The ratio is 2.3:1.

[0049] Step 3. Through the general process method of pulsed laser deposition (PLD), set the PLD laser energy to 400mJ, maintain the frequency at 25Hz, maintain the growth temperature at 650°C, maintain the distance between the target and the substrate at 4.5mm, and maintain the cavity pressure at 4.5mTorr, a 3μm carbon-doped GaN high-resistance layer was sequentially grown on a Cu(111) substrate (the doping con...

Embodiment 3

[0053] Step 1. At room temperature, clean and dry the single crystal Cu(111) substrate, put it into a rapid annealing furnace, pass in 25 sccm argon gas, and anneal at 400°C to obtain a clean single crystal Cu substrate, and into a pulsed laser deposition (PLD) chamber.

[0054] Step 2. Through the general process of electron beam evaporation, a graphite layer of 5 μm is selectively deposited on a 2-inch GaN target. The target area covered by the graphite layer and the target area not covered by the graphite layer are distributed axisymmetrically. The ratio is 2.5:1.

[0055] Step 3. Through the general process method of pulsed laser deposition (PLD), set the PLD laser energy to 350mJ, maintain the frequency at 30Hz, maintain the growth temperature at 700°C, maintain the distance between the target and the substrate at 5mm, and maintain the cavity pressure at 5mTorr , a 4 μm carbon-doped GaN high-resistance layer was sequentially grown on a Cu(111) substrate (the doping conce...

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Abstract

The invention discloses an HEMT device based on a Cu substrate and a preparation method thereof, and belongs to the field of HEMT devices. The HEMT device includes a Cu substrate, a carbon-doped GaN high-resistance layer, an intrinsic GaN channel layer, an AlN insertion layer, an AlGaN barrier layer, a gate electrode, a source electrode, and a drain electrode. In the present invention, by using apulsed laser deposition method, a HEMT nitride film with excellent crystal quality and a clear heterogeneous interface is prepared on the Cu substrate with high thermal conductivity, and includes a highly-doped GaN high-resistance layer, an intrinsic GaN channel layer, an AlN insertion layer, and an AlGaN barrier layer. Further, a Cu substrate HEMT device with good heat dissipation and stable performance is successfully prepared based on the HEMT nitride film. In addition, the preparation method is compatible with a traditional CMOS process, has no complicated operations and other harmful by-products during the preparation process, and provides a solution for the thermal stability of high-power electronic devices in the future.

Description

technical field [0001] The invention belongs to the field of HEMT devices, and in particular relates to a Cu substrate-based HEMT device and a preparation method thereof. Background technique [0002] Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are widely used in the fields of power electronics and microwave power due to their excellent characteristics such as high power density, high saturation current, high transconductance and high cut-off frequency. At present, as the power density of GaN-based HEMT devices continues to increase and the size continues to shrink, the heat dissipation of the device is also increasing, which will lead to device performance degradation, reduced output power, and increased failure rate, and even failure. In order to solve this problem, researchers at home and abroad have proposed a variety of heat dissipation methods to improve the high temperature stability of devices. However, thermal issues still account for mor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L23/373H01L21/335C23C14/28C23C14/06C23C14/04
CPCC23C14/04C23C14/0605C23C14/0641C23C14/28H01L23/3736H01L29/66462H01L29/7783
Inventor 李国强唐鑫王文樑胡智凯
Owner SOUTH CHINA UNIV OF TECH
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