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A kind of preparation method of graphene toughened silicon carbide ceramics

A technology of tough silicon carbide and graphene, which is applied in the field of preparation of graphene toughened silicon carbide ceramics, can solve the problems of high sintering temperature, low density, and slow densification speed, and achieve low sintering temperature and fast densification speed , high density effect

Active Publication Date: 2022-03-01
NUCLEAR POWER INSTITUTE OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a preparation method of graphene-toughened silicon carbide ceramics, which redesigns the sintering step and utilizes high temperature pressurization-low temperature pressureless vacuum cycle sintering technology to effectively solve the problem of high sintering temperature in the prior art. , slow densification speed, and low density, quickly obtain higher density graphene toughened silicon carbide ceramics at lower temperatures

Method used

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  • A kind of preparation method of graphene toughened silicon carbide ceramics
  • A kind of preparation method of graphene toughened silicon carbide ceramics
  • A kind of preparation method of graphene toughened silicon carbide ceramics

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Embodiment 1

[0056] Such as figure 1 A kind of preparation method of shown graphene toughened silicon carbide ceramics, comprises the following steps:

[0057] (A) mixing silicon carbide powder, graphene powder, sintering aid and solvent and pulverizing to prepare silicon carbide slurry;

[0058] (B) drying and pulverizing the silicon carbide slurry and sieving to prepare a uniformly mixed composite powder;

[0059] (C) packing the composite powder into a mould, applying unidirectional pressure to obtain a composite powder compact;

[0060] (D) Put the mold equipped with the composite powder compact into the sintering furnace, after the furnace temperature rises to the temperature T1, carry out the cyclic sintering process of heating and pressurizing-cooling and pressureless in a vacuum environment to prepare graphene toughened carbonization Silicon ceramics.

[0061] In step (A), 85-99wt% silicon carbide powder, 0.025-5wt% graphene powder and 0.5-10wt% sintering aid are loaded into a b...

Embodiment 2

[0070] On the basis of Example 1, in step (D), the cyclic sintering process of described temperature rise and pressure-fall temperature without pressure comprises the following steps:

[0071] (D1) Pressurize the composite powder compact to P, and continue to heat up to T2;

[0072] (D2) holding time t1 at temperature T2;

[0073] (D3) Remove the pressure P applied to the composite powder compact, and lower the temperature to T1;

[0074] (D4) holding time t2 at temperature T1;

[0075] (D5) repeat steps (D1)-(D4);

[0076] In the above steps, the temperature T1 is 1500-1650°C, the temperature T2 is 1750-1900°C, the pressure P is 10-30MPa, the holding time t1 is 10-30min, and t2 is 30-60min.

[0077] In some embodiments, the temperature increase rate from T1 to T2 is 5-10°C / min; the temperature decrease and pressure removal from T2 to T1 are completed within 5 minutes.

[0078] The technical solution can be automatically realized through program setting, the process is sim...

Embodiment 3

[0081] Such as figure 2 As shown, the present embodiment adopts the following steps to prepare graphene toughened silicon carbide ceramics:

[0082] (A) Put 89 parts of graphene with a particle size of 50nm, 1 part of graphene with a particle size of 1-15 μm and a sheet thickness of 5 nm, 6 parts of alumina with a particle size of 0.5 μm, and 4 parts of yttrium oxide with a particle size of 0.6 μm in a ball mill jar, and add 120 parts of deionized water were ball milled for 24 hours to obtain a uniformly mixed silicon carbide slurry;

[0083] (B) Take out the above-mentioned silicon carbide slurry, put it in a drying oven and dry it at 60° C. for 12 hours, and sieve it with a 40-mesh sieve after crushing to prepare a composite powder of graphene+sintering aid+silicon carbide;

[0084] (C) Put the above-mentioned composite powder into a graphite mould, install a pressure head and apply a unidirectional pressure of 5 MPa on the press to obtain a composite powder compact;

[0...

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Abstract

A preparation method of graphene toughened silicon carbide ceramics, comprising the following steps: (A) mixing silicon carbide powder, graphene powder, sintering aid and solvent and pulverizing to prepare silicon carbide slurry; (B) mixing The silicon carbide slurry is dried, pulverized, and sieved to prepare a uniformly mixed composite powder; (C) put the composite powder into a mold and apply unidirectional pressure to obtain a composite powder compact; (D) put the composite powder The mold of the powder compact is put into the sintering furnace, and after the furnace temperature rises to the temperature T1 in a vacuum environment, the cyclic sintering process of temperature rise and pressure-fall temperature and no pressure is carried out to prepare graphene toughened silicon carbide ceramics. The present invention utilizes high temperature pressurization-low temperature pressureless vacuum cycle sintering technology, effectively solves the problems of high sintering temperature, slow densification speed and low density in the prior art, and obtains densification rapidly at a lower temperature Higher graphene toughened silicon carbide ceramics.

Description

technical field [0001] The invention relates to the field of inorganic non-metallic materials, in particular to a method for preparing graphene-toughened silicon carbide ceramics. Background technique [0002] Silicon carbide ceramics have very high high-temperature strength, and can still maintain a relatively high bending strength at 1600 ° C. The heat resistance is better than other ceramics, and it is resistant to radiation, corrosion and oxidation. It is an important high-temperature structural material. , Widely used in high-performance engines, bulletproof armor, wear-resistant parts, refractory materials, sealing parts and other fields. The application in the nuclear industry also has a history of nearly fifty years, such as the cladding layer of high-temperature gas-cooled reactor TRISO fuel particles and the first wall structure material of fusion reactors. [0003] Silicon carbide, like other ceramics, is a brittle material with low tensile strength, poor plastic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/64C04B35/645
CPCC04B35/565C04B35/64C04B35/645C04B2235/425C04B2235/66C04B2235/3217C04B2235/3225C04B2235/77C04B2235/96
Inventor 付道贵张瑞谦何宗倍吴松岭李刚李鸣邱绍宇姚力夫
Owner NUCLEAR POWER INSTITUTE OF CHINA
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