Structure of electronically controlled magneton valve based on bulk acoustic wave excitation

A technology of bulk acoustic wave and magnetic sub-valve, which is applied in the direction of magnetic field controlled resistors, circuits, electrical components, etc., can solve the problem of the volatile nature of electronic control, the inability to reflect the overall controllability of the effect of the electric field on the device, and the ease of information Lost and other issues

Active Publication Date: 2021-03-26
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Chinese invention patent CN 104362250B proposes an electroresistive heterojunction with exchange bias effect, which only realizes the electronically controlled exchange bias heterojunction structure, and does not form a prototype device (only through the exchange bias effect cannot The device is well formed to achieve the performance of the device, so this prior art has done research on the exchange bias but has not further studied it to form a prototype device), so it cannot reflect the overall regulation of the electric field on the device effect
And only based on the change of the resistance state caused by the exchange bias effect is limited, and the information is easily lost when used in storage
[0006] So far, most multiferroic heterostructures can only realize the regulation of the magnitude of the magnetic moment by the electric field, and the regulation of the direction of the magnetic moment often requires the assistance of a magnetic field, and most of the electrical control properties are volatile, and cannot be controlled without the assistance of a magnetic field. Technology that can realize magnetic moment rotation and magnetoresistance change in spintronic devices controlled by electric field non-volatility

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  • Structure of electronically controlled magneton valve based on bulk acoustic wave excitation
  • Structure of electronically controlled magneton valve based on bulk acoustic wave excitation
  • Structure of electronically controlled magneton valve based on bulk acoustic wave excitation

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preparation example Construction

[0050] Considering the preparation of multiferroic films, the substrate is preferably SrTiO 3 as a substrate. Considering the lattice matching between the multiferroic layer film and the bottom electrode layer, the bottom electrode layer is preferably SrRuO 3 . Deposit the bottom electrode layer on the ferroelectric single crystal substrate, and control the degree of lattice matching between the electrode layer and the multiferroic layer (the degree of lattice mismatch between the electrode layer and the polycrystalline multiferroic layer can be preferably less than 0.1, That is, it is preferably less than 10%), and the area of ​​the bottom electrode layer is consistent with the substrate, mainly serving as a buffer layer between the electrode layer and the upper multiferroic layer.

[0051] Prepare the multiferroic layer on the bottom electrode layer. In order to reduce the leakage current of the device and realize the electrical controllability of the device, the multiferr...

Embodiment 1

[0058] This embodiment can adopt the preparation method of following steps:

[0059] In single crystal SrTiO 3 A layer of SrRuO was prepared on the (001) substrate by pulsed laser deposition (PLD). 3 as the bottom electrode.

[0060] On the bottom electrode, adopt PLD to prepare a layer of Ti-doped BFO as a buffer layer, and the specific doping concentration of Ti-doped can be 5% (that is, BiFe 1-x Ti x o 3 where x=0.05); of course, the doping amount can also be properly adjusted to minimize the leakage current of the Ti-doped BFO buffer layer.

[0061] Re-grow one layer of La-doped BFO film as the electrical control layer of the device, and the specific doping concentration of La doping can be 5% (that is, Bi 1-x La x FeO 3 where x=0.05), according to the experimental results, the remanent polarization Pr value of the material is larger at this time, which can make the ferroelectric have a more effective pyroelectric effect or piezoelectric effect after artificial pola...

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Abstract

The invention belongs to the field of memory, and discloses an electronically controlled magneton valve structure based on bulk acoustic wave excitation, including a thin film bulk acoustic wave resonator substructure and a magneton valve substructure located on a substrate (1) from top to bottom and ferroelectric exchange bias heterojunction substructure; thin film bulk acoustic wave resonator substructure is used to provide bulk acoustic wave excitation to magnetic valve substructure; use thin film bulk acoustic wave resonator substructure to regulate the generated bulk acoustic wave Resonant frequency and amplitude, realize ferromagnetic resonance to excite the magnitude of the magneton flow in the magneton substructure, so as to realize the conduction and cut-off of the magneton substructure, and realize the magneton valve effect of the magneton substructure motivation. The present invention improves the key excitation mode of the magneton valve and other substructures correspondingly arranged, so that the structure can adjust the resonant frequency and amplitude through FBAR to realize ferromagnetic resonance to excite the size of the magneton flow in the magneton valve, and realize The disconnection of the device achieves the function of storage.

Description

technical field [0001] The present invention belongs to the field of memory, and more specifically relates to an electronically controlled magneton valve structure based on bulk acoustic wave excitation. Taking advantage of the advantages of short transmission path, low loss, high operating frequency and easier resonance with spin waves when bulk acoustic waves propagate in the direction perpendicular to the device film, it is a new type of memory device structure, especially suitable for applications at room temperature. Background technique [0002] For half a century, the transistor technology that regulates the conductivity of semiconductors by an electric field has developed rapidly, verifying the Moore's Law proposed in 1965. At present, the CMOS integration process has been developed to below 5nm. Without changing the basic mode of transistor technology, only from the physical scale, Moore's Law will be unsustainable. In order to meet the development requirements of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/08
CPCH10N52/101H10N50/10
Inventor 傅邱云王欢欢仲世豪
Owner HUAZHONG UNIV OF SCI & TECH
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