Magnetron sputtering method for preparing all-inorganic perovskite solar cell

Abstract

The invention relates to a magnetron sputtering method for preparing an all-inorganic perovskite solar cell. The method comprises a step of preprocessing a substrate, a step of forming an electron transport layer on the surface of the preprocessed substrate by magnetron sputtering and then continuing to adopting a caesium-tin alloy target for magnetron sputtering equipment to react to obtain an all-inorganic perovskite material, a step of forming a solar cell hole transport layer on a perovskite material layer by magnetron sputtering, and a step of drying and completing the deposition of a cathode metal electrode to obtain the all-inorganic perovskite solar cell. The method has the advantages that the ozone cleaning and the magnetron sputtering argon ion cleaning are combined, and the surface finish degree of the material is further ensured. The magnetron sputtering method is employed by a perovskite absorption layer, iodine vapor is introduced to be in full contact with metal ions such as caesium and tin, the good surface morphology is formed, and a perovskite film with large crystal grains and without pores is formed.

Description

technical field [0001] The invention relates to a magnetron sputtering method for preparing an all-inorganic perovskite solar cell, in particular to a magnetron sputtering method for preparing an all-inorganic perovskite solar cell by using a cesium-tin alloy target in an iodine atmosphere. Background technique [0002] Organic-inorganic hybrid perovskite materials have broad application prospects in the field of optoelectronic devices due to their simple preparation method, adjustable band gap, large absorption coefficient, low defect density, and high optical gain. However, with the rapid development of organic-inorganic hybrid perovskite materials in the fields of solar cells, light-emitting diodes (LEDs), and lasers, the problem of poor stability has become increasingly prominent and has become a key bottleneck hindering the practical application of this material. In order to improve the stability and photoelectric conversion efficiency of traditional perovskite solar ce...

AI Technical Summary

Problems solved by technology

However, sputtering high-energy particles will cause certain damage to the perovskite film, causing a large number of defect states to form between the perovskite layer and the electron transport layer, introducing electron recombination centers, and eventually causing the interruption of charge transmission.

Chinese Patent Publication No.: CN 107863424 A, which discloses a perovskite-based all-inorganic light-emitting device and its preparation method. The patent uses a combination of vapor deposition and solution method to prepare the absorption layer. The preparation process is relatively complicated, and the material The surface roughness is large, which is easy to cause defect failure

Chinese Patent Publication No.: CN 103706539 A, which discloses a method for preparing cesium tin triiodide thin film by ultrasonic jet printing method. The patent adopts a proportioned solution and then reacts in the ultrasonic jet printing process, which has the problem of insufficient reaction process. And the prepared sample is similar to the vacuum powder deposition method, but the equipment cost is higher

[0005] Based on the above content, we can see that the preparation process of some existing processes through interface modification and material improvement is relatively complicated and has large uncontrollable factors.

The preparation method has the problems of low film quality and expensive equipment

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