Preparation method of P-type passivation contact crystalline silicon solar cell

Abstract

The invention provides a preparation method of a P-type passivation contact crystalline silicon solar cell, and relates to the technical field of solar cells. The method comprises the following stepsof providing a P-type silicon wafer; generating a silicon oxide layer on the back surface of the silicon wafer; depositing an amorphous silicon layer on the silicon oxide layer; coating the amorphoussilicon layer with boron paste and carrying out drying to form a boron-containing barrier layer on the amorphous silicon layer; carrying out heat treatment on the silicon wafer, wherein the heat treatment comprises first heat treatment, second heat treatment and third heat treatment which are sequentially and continuously carried out; carrying out etching treatment on the silicon wafer; depositinga first passivation film on the front surface of the silicon wafer, and depositing a second passivation film on the back surface of the silicon wafer; and arranging metal electrodes on the front surface and the back surface of the silicon wafer. The three independent high-temperature treatment processes of amorphous silicon crystallization, boron diffusion and phosphorus diffusion are integratedinto one process, so that the preparation process is simplified, the yield of the battery can be improved, the production period is shortened, and the productivity is improved. Due to the fact that the high-temperature treatment process of the battery is simplified, the influence on the minority carrier service life is reduced, and the battery efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a P-type passivated contact crystalline silicon solar cell. Background technique [0002] In recent years, PERC (Passivated Emitter and Rear Cell, Passivated Emitter and Rear Cell) crystalline silicon solar cells that use a dielectric layer for back passivation have received extensive attention from the photovoltaic industry, and their production capacity has increased rapidly, from 5GW at the end of 2015 to 2018 At the end of the year, 78GW has become a mainstream product in the photovoltaic market. With the improvement of production capacity, the efficiency of PERC cells has also been continuously improved, and the current average efficiency of mass production has reached 22%. However, PERC cells must open holes in the dielectric layer to achieve electrode contact on the back, but the recombination rate in the electrode contact area is fast, resultin...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a method for preparing a P-type passivated contact crystalline silicon solar cell to solve the problem of complex preparation process

Images