Preparation method of green AIN:Tb fluorescent powder material

Abstract

The invention relates to a preparation method of a green AIN:Tb fluorescent powder material. The preparation method comprises following steps: S1), aluminum powder, magnesium powder, ammonium chlorideand terbium powder are sufficiently mixed by grinding, the mixture is transferred into an alumina ceramic ark, and reaction precursor powder is obtained; S2), the alumina ceramic ark is transferred into a tube type resistance furnace, nitrogen gas is introduced for nitrogen treatment, and the green AIN:Tb fluorescent powder material is obtained by thermal insulation and cooling. The preparation method has the advantages that the preparation process is simple, the preparation cost is low, the nitriding temperature is low and the material has good performance, high purity, small particles anduniform particle size, the nitridation rate of a product is increased by adding magnesium powder and ammonium chloride as catalysts, nitridation can be realized at a lower temperature, and the preparation process is high in controllability and convenient to implement; the green AIN:Tb fluorescent powder material has the characteristic of green fluorescence property, a sample is subjected to crystal phase analysis through X-ray diffraction, and a diffraction peak is free of impurity phase and is relatively sharp.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a method for preparing a green AIN:Tb fluorescent powder material. Background technique [0002] At present, there are two main ways to realize white LED, one is multi-chip light emission, and the other is single chip + phosphor light emission. Multi-chip lighting has problems such as high cost, different luminous efficiency of each chip, and poor heat dissipation. At present, the mainstream is still the white light implementation method of single chip + phosphor. Phosphor plays a pivotal role in white LEDs, and its luminous performance, luminous properties and stability directly determine the performance of LED devices. Doped AlN phosphors are widely used in the LED field because of their wide energy band gap (6.2ev), high chemical stability and thermal stability, etc. [0003] AIN is a III-V semiconductor covalent bond compound, which has comprehensive excellent...

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Problems solved by technology

The application number is "201110261911.6", and the title of the invention is "A Preparation Method of Eu-doped Aluminum Nitride-Based Phosphor Powder", which discloses a method of mixing aluminum powder, aluminum nitride, europium oxide, and silicon carbide in a nitrogen atmosphere. The method of preparing blue aluminum nitride phosphor by combustion synthesis under lower pressure is generally between 0.5MPa and 3MPa, which requires special equipment and is not conducive to industrial production

The application number is "201310473558.7", and the title of the invention is "A Preparation Method of Rare Earth Doped Aluminum Nitride-based Blue Phosphor Powder", which discloses a method of sintering aluminum powder, silicon powder, europium oxide powder and ammonium fluoride powder , cooled to room temperature, and the product was ground and pulverized to obtain a rare earth-doped aluminum nitride-based blue phosphor. The crushing process changed the powder particles from coarse to fine, resulting in damage to the particle surface, resulting in a large number of surface defects, affecting luminescence performance

In addition, the particle size distribution after crushing is not uniform, and the bulk density of the powder is small, which increases the scattering coefficient and reduces the luminous efficiency.

[0008] Because the above methods all have problems such as high reaction temperature, long holding time, and complicated equipment required, resulting in high production cost and low efficiency.

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