Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cobalt iron alloy target material, magnetic conductive layer, magnetic capacitance unit, a magnetic capacitance device and fabrication method of magnetic capacitance device

A cobalt-iron alloy and magnetic capacitor technology, applied in the field of capacitors, can solve problems such as difficult problems, and achieve the effects of increased life, high startup efficiency and reliability, and high toughness

Inactive Publication Date: 2019-06-14
朱广琼 +2
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Passive magnetic energy capacitors are a major revolution in semiconductor industry technology and materials, and are being perfected for commercialization, which has epoch-making significance! However, in the prior art, it is still a technical problem to apply cobalt to magnetic energy capacitors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cobalt iron alloy target material, magnetic conductive layer, magnetic capacitance unit, a magnetic capacitance device and fabrication method of magnetic capacitance device
  • Cobalt iron alloy target material, magnetic conductive layer, magnetic capacitance unit, a magnetic capacitance device and fabrication method of magnetic capacitance device
  • Cobalt iron alloy target material, magnetic conductive layer, magnetic capacitance unit, a magnetic capacitance device and fabrication method of magnetic capacitance device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A cobalt-iron alloy target used for magnetron sputtering coating, which is an alloy made of cobalt and iron with an atomic ratio of 6.5-8.5: 3.5-1.5.

[0043] The cobalt-iron alloy target can be prepared by the following steps: converting pure Co and Fe raw materials into a corresponding mass ratio CoFe=70.47-29.53 at an atomic ratio of 7:3. After removing the raw material impurities, it is smelted in a vacuum smelting furnace. The ratio of cobalt to iron atoms is controlled by a series of quality control such as spectrum testing: 6.5~8.5: 3.5~1.5 and the purity is not less than 95% (total cobalt and iron content ≥95% ), after determining the performance of the corresponding product, it will be processed by FANUC CNC machining center.

Embodiment 2

[0045] A magnetic conductive layer, which is composed of multiple layers of nano-scale magnetic films, wherein each layer of the nano-scale magnetic film is deposited by magnetron sputtering coating using the cobalt-iron alloy target of Example 1. The thickness of each layer of nano-scale magnetic film It is 5~25nm. Preferably, the total thickness is controlled to be 150-250 nm.

Embodiment 3

[0047] A kind of magnetic capacitance unit, such as figure 1 As shown, it includes from top to bottom: top electrode layer 1, magnetic conductive layer 2, insulating layer 3, magnetic conductive layer 4, bottom electrode layer 5. The magnetic conductive layers 2 and 4 have the same structure as the magnetic conductive layer of embodiment 2. . The composition and thickness of each layer are as follows.

[0048]

[0049] Preferably, the length of the magnetic capacitor unit is 1.0-1.6 μm, and the width is 0.8-1.0 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cobalt iron alloy target. The cobalt iron alloy target is used for magnetron sputtering and coating and is alloy fabricated by mixing cobalt and iron according to an atom proportion being (6.5-8.5):(3.5-1.5). The invention also discloses a magnetic conductive layer made of the cobalt iron alloy target, a magnetic capacitance unit and a magnetic capacitance device. Due tothe presence of cobalt, the cobalt iron alloy target has relatively excellent wear resistance, cutting performance and heat resistance and is used for magnetron sputtering and coating, favorable magnetism of the prepared multi-layer nanoscale thin film can be maintained by magnetization for one time, moreover, favorable magnetism also can be maintained under a high temperature, and the stored electric energy quantity of the magnetic capacitance device can be improved to be 10 <9>-10<12> from 10<4>-10<5> when the cobalt iron alloy target is used in a semiconductor magnetic energy power storagecapacitor.

Description

Technical field [0001] The invention belongs to the technical field of capacitors, and relates to a cobalt-iron alloy target, a magnetic conductive layer, a magnetic capacitance unit, a magnetic capacitance device and a preparation method thereof. Background technique [0002] In the field of semiconductor devices, after IBM replaced "aluminum" with "copper" as the wire material, two decades have passed the rapid development of Moore's Law. Today, the third wave of industrial revolution based on semiconductors is constantly detonated with the help of artificial intelligence and big data. However, the difficulty of semiconductor technology is rapidly rising after entering the 7-nanometer process, including Intel’s 10-nanometer delay that has not yet come out for many years. It is revealed that the difficulty of pushing Moore's Law has greatly increased, and Moore's Law is also approaching its limit. [0003] In the "post-Moore's Law" era, in order to continue the economic benefits ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64
CPCH01L28/40
Inventor 朱广琼燕俊羽高湛勋
Owner 朱广琼
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products