Preparation for catalyst-silicon carbide reactor for preparing ethylene through ethane dehydrogenation
A technology of silicon carbide and reactors, applied in the direction of physical/chemical process catalysts, hydrocarbons, hydrocarbons, etc.
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[0035] Embodiment 1-12 is the preparation of lattice doping reactor; Embodiment 13-22 is impregnation method supported catalyst; Embodiment 23-32 is gas phase CVD method supported catalyst; Embodiment 33-38 is sol-gel Combined with the high temperature melting method to support the catalyst.
[0036] Catalyst loading methods include impregnation, chemical vapor deposition (MCVD) or sol-gel combined with high-temperature melting coating technology:
[0037] Impregnation method: at 1-3 atmospheric pressure, immerse the shaped silicon carbide reactor in the doped metal salt solution for 0.1-48 hours at a temperature of 20-80°C; then melt it at 1600-2200°C to obtain Corresponding inner wall metal lattice-doped reactor, then cooled immediately to obtain catalyst-reactor after solidification;
[0038] Chemical vapor deposition method: under 1-3 atmospheric pressure, silicon tetrachloride liquid is doped with volatile doped metal salt or non-metallic chlorine gas-doped at 50-500°C w...
Embodiment 1
[0050] Mix 1kg SiC powder, 300g high-purity graphite powder, 300g silicon powder, 20g ferric nitrate, 100mL epoxy resin, and 100mL water. The SiC powder is α-SiC with a particle size of 100-400nm and silicon powder with a particle size of 100μm. , sent to the extruder for extruded molding, the forming reactor is a straight tube, 2 meters in length, 35mm in outer diameter, 25mm in inner diameter, after 4 days of natural drying, it is sent to a 50°C muffle furnace to continue drying and dehumidification, and continue to dry in the N 2 Under the protection of , it was treated in a high-temperature furnace at 2000°C for 2 days, taken out after cooling down, and the surface of the reactor was finely polished to obtain reactor R1.
Embodiment 2
[0052] Mix 1kg SiC powder, 200g high-purity graphite powder, 200g silicon powder, 20g ferric chloride, 100mL epoxy resin, and 100mL water. The SiC powder is α-SiC with a particle size of 300-1000nm. 100 μm, sent to the extruder for extruded molding, the forming reactor is a straight tube type, 2 meters in length, 15mm in outer diameter, 5mm in inner diameter, after 4 days of natural drying, it is sent to a muffle furnace at 50°C to continue drying and dehumidification, and then Carry out pressing treatment, pressing pressure is 100Mpa, and pressing time is 30 minutes. continue at N 2 Under the protection of , it was treated in a high-temperature furnace at 2000°C for 3 days, taken out after cooling down, and the surface of the reactor was finely polished to obtain reactor R2.
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