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Transition metal-doped molybdenum disulfide thin-layer material as well as preparation method and application thereof

A transition metal, thin-layer material technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of large thickness of composite coating and small distribution size of products, and achieve controllable process and application The effect of range expansion

Active Publication Date: 2018-12-18
SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

CN 108149220 A discloses a rare earth yttrium-doped molybdenum disulfide self-lubricating composite coating and its preparation method. The composite coating has a uniform and compact structure and excellent friction and wear resistance, but the thickness of the composite coating is relatively large, and the product The distribution size is small, and only its performance in terms of wear resistance and anticorrosion is clarified, and optical, electrical and other properties are not mentioned

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  • Transition metal-doped molybdenum disulfide thin-layer material as well as preparation method and application thereof
  • Transition metal-doped molybdenum disulfide thin-layer material as well as preparation method and application thereof
  • Transition metal-doped molybdenum disulfide thin-layer material as well as preparation method and application thereof

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Embodiment 1

[0069] This embodiment provides a method for preparing a manganese-doped molybdenum disulfide thin layer material, and the schematic diagram of the method is as follows figure 1 As shown, the schematic diagram is as figure 2 shown, including the following steps:

[0070] (1) 10mg molybdenum trioxide and 20mg manganese dioxide are mixed with sodium chloride respectively, the mass ratio of molybdenum trioxide and sodium chloride is 6:1, and the mass ratio of manganese dioxide and sodium chloride is 2:1;

[0071] (2) molybdenum trioxide, manganese dioxide and Si / SiO mixed with sodium chloride in step (1) 2 The substrate is placed in the second heating zone of the tube furnace, the manganese dioxide is located at a distance of 6 cm from the upstream of the molybdenum trioxide, and the Si / SiO 2 The substrate is placed face down directly above the molybdenum trioxide, the sulfur powder is placed in the first heating zone upstream of the manganese dioxide, and the mass of the sulf...

Embodiment 2

[0076] This embodiment provides a method for preparing an iron-doped molybdenum disulfide thin layer material, the method comprising the following steps:

[0077] (1) 20mg molybdenum trioxide and 80mg ferric oxide are mixed with sodium chloride respectively, the mass ratio of molybdenum trioxide and sodium chloride is 3:1, and the mass ratio of ferric oxide and sodium chloride is 6: 1;

[0078] (2) molybdenum trioxide, ferric oxide and mica substrate mixed with sodium chloride in step (1) are placed in the second heating zone of the tube furnace, and ferric oxide is positioned at the upstream of molybdenum trioxide In the area of ​​3cm, the mica substrate is placed directly above the molybdenum trioxide, and the ammonium sulfide is placed in the first heating zone upstream of the ferric oxide, and the quality of the ammonium sulfide used is 600mg;

[0079] (3) In the tube furnace described in step (2), feed argon at a rate of 50 mL / min, the first heating zone maintains a heat...

Embodiment 3

[0083] This embodiment provides a method for preparing a cobalt-doped molybdenum disulfide thin layer material, the method comprising the following steps:

[0084] (1) 5mg molybdenum trioxide and 30mg cobalt oxide are mixed with potassium chloride respectively, the mass ratio of molybdenum trioxide and potassium chloride is 4.5:1, and the mass ratio of cobalt oxide and potassium chloride is 10:1;

[0085] (2) molybdenum trioxide, cobalt oxide and sapphire substrate mixed with potassium chloride in step (1) are placed in the second heating zone of tube furnace, cobalt oxide is positioned at the upstream of molybdenum trioxide and is apart from the region of 10cm, The sapphire substrate is placed face down directly above the molybdenum trioxide, diethyl sulfide is placed in the first heating zone upstream of the cobalt oxide, and the quality of diethyl sulfide used is 500 mg;

[0086] (3) In the tube furnace described in step (2), feed argon at a rate of 50 mL / min, the first hea...

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Abstract

The invention provides a transition metal-doped molybdenum disulfide thin-layer material as well as a preparation method and application thereof. The two-dimensional size of the thin-layer material is50-500 microns, and the thickness ranges from 0.7-2.2 nanometre; and the method comprises the following steps that a molybdenum source and an inorganic salt mixture, a transition metal doping sourceand the inorganic salt mixture as well as a sulfur source are subjected to chemical vapor deposition reaction in a protective gas, and a transition metal doped molybdenum disulfide thin layer materialis obtained on the surface of a substrate. According to the method and the application, an inorganic salt assisting chemical vapor deposition method is adopted, the molybdenum source, the transitionmetal doping source and the inorganic salt are mixed, and then the chemical vapor deposition reaction is carried out, so that the metal replacement type doping of transition metal sulfide is realized,so that the doped molybdenum disulfide thin-layer material with large size distribution is prepared; and the method is simple and easy to operate, the process is controllable, the obtained material is good in morphology, optical, electrical and other performances are excellent, and the method and the application have a wide application prospect.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional semiconductor material preparation, and relates to a transition metal-doped molybdenum disulfide thin-layer material, a preparation method and application thereof. Background technique [0002] In recent years, the progress of modern information technology has largely relied on the development of integrated circuits based on semiconductor silicon. At present, due to the limitations of physical laws such as short channel effects and manufacturing costs, mainstream complementary metal oxides Semiconductor (CMOS) technology is about to reach the 10nm technology node, and it is difficult to continue to improve, which also indicates that "Moore's Law" may come to an end. Therefore, exploring new semiconductor materials and transistor technology based on new principles in order to replace silicon-based CMOS technology has always been one of the mainstream research directions in the scientific an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44
CPCC23C16/305C23C16/44
Inventor 成会明刘碧录蔡正阳
Owner SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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